- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄367942 > PHT1N60R (NXP SEMICONDUCTORS) PowerMOS transistor PDF資料下載
參數(shù)資料
| 型號： | PHT1N60R |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor |
| 中文描述： | 0.46 A, 600 V, 16 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SOT-223, 4 PIN |
| 文件頁數(shù)： | 5/5頁 |
| 文件大?。?/td> | 30K |
| 代理商： | PHT1N60R |
Philips Semiconductors
Objective specification
PowerMOS transistor
PHT1N60R
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other indus-
trial or intellectual property rights.
This data sheet contains target or goal specifications for product development.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
February 1998
5
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PHT4N10T | 12V, 30mA Flash Memory Programming Supply; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to +70°C |
| PHT6N10T | 1.2A, High Efficiency Step-Down DC/DC Converter; Package: SO; No of Pins: 14; Temperature Range: 0°C to +70°C |
| PHT8N06T | TrenchMOS transistor Standard Level FET(TrenchMOS 晶體管標準電平場效應(yīng)管) |
| PHT8N06 | TrenchMOS transistor Standard level FET |
| PHU11NQ10T | TrenchMOS⑩ standard level FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHT1N60S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 590MA I(D) | SOT-223 |
| PHT1N60T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 650MA I(D) | SOT-223 |
| PHT2010E10R0BGT | 制造商:Vishay Sfernice 功能描述:RESISTOR THIN FILM 10OHM 100mW 0.1% 制造商:Vishay Sfernice 功能描述:RESISTOR, THIN FILM, 10OHM, 100mW, 0.1% 制造商:Vishay Intertechnologies 功能描述:RESISTOR, THIN FILM, 10 OHM, 100mW, 0.1%, Product Range:VISHAY - PHT Series, Res |
| PHT2010E10R0DG | 功能描述:薄膜電阻器 - SMD PHT 2010 E 10R0 D G WP e4 RoHS:否 制造商:AVX 電阻:50 Ohms 容差:2 % 溫度系數(shù):150 PPM / C 封裝 / 箱體:2010 (5025 metric) 功率額定值:10 W 系列:RP9 電壓額定值: 工作溫度范圍:- 55 C to + 150 C 端接類型:SMD/SMT 尺寸:2.54 mm W x 5.08 mm L x 1.02 mm H 封裝:Reel |
| PHT2010E10R0DGT | 功能描述:薄膜電阻器 - SMD 100mWatt 10ohms 0.5% 30ppm RoHS:否 制造商:AVX 電阻:50 Ohms 容差:2 % 溫度系數(shù):150 PPM / C 封裝 / 箱體:2010 (5025 metric) 功率額定值:10 W 系列:RP9 電壓額定值: 工作溫度范圍:- 55 C to + 150 C 端接類型:SMD/SMT 尺寸:2.54 mm W x 5.08 mm L x 1.02 mm H 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。