參數(shù)資料
型號(hào): PHP11N50E
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistors Avalanche energy rated
中文描述: 10.4 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù): 6/7頁(yè)
文件大?。?/td> 41K
代理商: PHP11N50E
Philips Semiconductors
Preliminary specification
PowerMOS transistors
Avalanche energy rated
PHP11N50E, PHB11N50E, PHW11N50E
MECHANICAL DATA
Dimensions in mm
Net Mass: 5 g
Fig.4. SOT429; pin 2 connected to mounting base.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for SOT429 envelope.
3. Epoxy meets UL94 V0 at 1/8".
5.3
4.0
max
21
max
15.5
min
1
2.2 max
3.2 max
0.4
2.5
0.9 max
5.3 max
3.5
16 max
5.45
seating
plane
5.45
M
o
15.5
max
2
3
1.1
3.5
max
1.8
7.3
January 1998
6
Rev 1.000
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