參數(shù)資料
型號： PHP11N50E
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： PowerMOS transistors Avalanche energy rated
中文描述： 10.4 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù)： 2/7頁
文件大?。?/td> 41K
代理商： PHP11N50E
Philips Semiconductors
Preliminary specification
PowerMOS transistors
Avalanche energy rated
PHP11N50E, PHB11N50E, PHW11N50E
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
E
AS
Non-repetitive avalanche
energy
CONDITIONS
Unclamped inductive load, I
= 10.4 A;
V
DD
≤
50 V; starting T
j
= 25C; R
GS
= 50
;
V
GS
= 10 V
MIN.
-
MAX.
676
UNIT
mJ
E
AR
I
AS
, I
AR
Repetitive avalanche energy
2
Repetitive and non-repetitive
avalanche current
-
-
16.9
10.4
mJ
A
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
Thermal resistance junction
to mounting base
R
th j-a
Thermal resistance junction
to ambient
CONDITIONS
MIN.
-
TYP. MAX. UNIT
-
0.8
K/W
SOT78 package, in free air
SOT429 package, in free air
SOT404 package, pcb mounted, minimum
footprint
-
-
-
60
45
50
-
-
-
K/W
K/W
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
(BR)DSS
/ Drain-source breakdown
T
j
voltage temperature
coefficient
R
DS(ON)
Drain-source on resistance
V
GS(TO)
Gate threshold voltage
g
fs
Forward transconductance
I
DSS
Drain-source leakage current V
DS
= 500 V; V
GS
= 0 V
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA
MIN.
500
TYP. MAX. UNIT
-
-
V
V
DS
= V
GS
; I
D
= 0.25 mA
-
0.1
-
%/K
V
GS
= 10 V; I
= 5.2 A
V
DS
= V
; I
D
= 0.25 mA
V
DS
= 30 V; I
= 5.2 A
-
0.5
3.0
7
1
60
10
120
8
65
22
70
145
84
3.5
4.5
0.6
4.0
-
25
500
200
150
10
85
-
-
-
-
-
-
V
S
μ
A
μ
A
nA
nC
nC
nC
ns
ns
ns
ns
nH
nH
2.0
4
-
-
-
-
-
-
-
-
-
-
-
-
V
DS
= 400 V; V
GS
= 0 V; T
j
= 125 C
I
GSS
Q
g(tot)
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
d
L
d
Gate-source leakage current V
GS
=
±
30 V; V
DS
= 0 V
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
I
D
= 10.4 A; V
DD
= 400 V; V
GS
= 10 V
V
DD
= 250 V; R
D
= 22
;
R
G
= 5.6
Measured from tab to centre of die
Measured from drain lead to centre of die
(SOT78 and SOT429 packages only)
Measured from source lead to source
bond pad
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
L
s
Internal source inductance
-
7.5
-
nH
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Feedback capacitance
-
-
-
1400
220
125
-
-
-
pF
pF
pF
2
pulse width and repetition rate limited by T
j
max.
January 1998
2
Rev 1.000
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