參數(shù)資料
型號: PHB73N06T
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel enhancement mode field-effect transistor
中文描述: 73 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, D2PAK-3
文件頁數(shù): 4/14頁
文件大?。?/td> 264K
代理商: PHB73N06T
Philips Semiconductors
PHP73N06T; PHB73N06T
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 — 12 March 2001
4 of 14
9397 750 08107
Philips Electronics N.V. 2001. All rights reserved.
7.
Thermal characteristics
7.1 Transient thermal impedance
Table 4:
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to mounting
base
thermal resistance from junction to ambient
Conditions
Figure 5
Value
0.9
Unit
K/W
R
th(j-a)
SOT78 package; vertical in still air
SOT404 package; mounted on
printed circuit board; minimum
footprint.
60
50
K/W
K/W
Fig 5.
Transient thermal impedance from junction to mounting base as a function of
pulse duration.
10
1
10-1
10-2
10-3
10-4
10-5
10-6
10-7
Zth (j-mb)
(K/W)
1
10-1
10-2
10-3
δ
= 0.5
δ
=
0.5
0.2
0.1
0.05
0.02
Single pulse
T
P
tp
t
T
tp
δ
=
tp (s)
003aaa084
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