- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄367942 > PHB6N60E (NXP SEMICONDUCTORS) PowerMOS transistors Avalanche energy rated PDF資料下載
參數(shù)資料
| 型號： | PHB6N60E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistors Avalanche energy rated |
| 中文描述： | 5.4 A, 600 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SOT-404, 3 PIN |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 74K |
| 代理商： | PHB6N60E |
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHP6N60E, PHB6N60E
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
); parameter T
j
Fig.8. Typical transconductance
g
fs
= f(I
D
); parameter T
j
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 2.7 A; V
GS
= 10 V
Fig.10. Gate threshold voltage
V
GS(TO)
= f(T
j
); conditions: I
D
= 0.25 mA; V
DS
= V
GS
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 C; V
DS
= V
GS
Fig.12. Typical capacitances, C
, C
, C
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
0
2
4
6
8
10
0
2
4
6
8
10
PHP6N60E
Gate-source voltage, VGS (V)
Drain current, ID (A)
Tj = 25 C
150 C
VDS > ID x RDS(on)max
-60
-40
-20
0
20
40
Tj / C
60
80
100
120
140
VGS(TO) / V
4
3
2
1
0
max.
typ.
min.
0
2
4
6
8
10
0
1
2
3
4
5
6
PHP6N60E
Drain current, ID (A)
Transconductance, gfs (S)
Tj = 25 C
150 C
VDS > ID x RDS(on)max
0
1
2
VGS / V
3
4
ID / A
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
SUB-THRESHOLD CONDUCTION
typ
2 %
98 %
-60
-40
-20
0
20
40
Tj / C
60
80
100 120 140
Normalised RDS(ON) = f(Tj)
2
1
0
a
0.1
1
Drain-source voltage, VDS (V)
10
100
1000
10
100
1000
10000
PHP6N60E
Capacitances, Ciss, Coss, Crss (pF)
Ciss
Coss
Crss
December 1998
5
Rev 1.300
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PHP6NA60E | PowerMOS transistors Low capacitance Avalanche energy rated |
| PHP6ND50E | PowerMOS transistors FREDFET, Avalanche energy rated |
| PHB6ND50E | PowerMOS transistors FREDFET, Avalanche energy rated |
| PHP73N06T | N-channel enhancement mode field-effect transistor |
| PHB73N06T | N-channel enhancement mode field-effect transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHB6N60T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 7A I(D) | SOT-404 |
| PHB6ND50E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors FREDFET, Avalanche energy rated |
| PHB71NQ03LT | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | TO-263AB |
| PHB71NQ03LT | 制造商:NXP Semiconductors 功能描述:MOSFET N 30V D2-PAK |
| PHB73N06T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel enhancement mode field-effect transistor |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。