參數(shù)資料
型號(hào)： PHP6NA60E
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： PowerMOS transistors Low capacitance Avalanche energy rated
中文描述： 6.5 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 21K
代理商： PHP6NA60E
Philips Semiconductors
Preliminary specification
PowerMOS transistors
Low capacitance
Avalanche energy rated
PHP6NA60E
FEATURES
SYMBOL
QUICK REFERENCE DATA
Repetitive Avalanche Rated
Fast switching
Low feedback capacitance
Stable off-state characteristics
High thermal cycling performance
Low thermal resistance
V
DSS
= 600 V
I
D
= 6.5 A
R
DS(ON)
≤
1.2
GENERAL DESCRIPTION
PINNING
SOT78 (TO220AB)
N-channel,
field-effect
intendedfor use in off-lineswitched
mode power supplies, T.V. and
computer monitor power supplies,
d.c.tod.c.converters,motorcontrol
circuits
and
general
switching applications.
enhancement
power
mode
PIN
DESCRIPTION
transistor,
1
gate
2
drain
purpose
3
source
tab
drain
The PHP6NA60E is supplied in the
SOT78 (TO220AB) conventional
leaded package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
Drain-source voltage
V
DGR
Drain-gate voltage
V
GS
Gate-source voltage
I
D
Continuous drain current
CONDITIONS
T
j
= 25 C to 150C
T
j
= 25 C to 150C; R
GS
= 20 k
MIN.
-
-
-
-
-
-
-
- 55
MAX.
600
600
±
30
6.5
4.3
26
125
150
UNIT
V
V
V
A
A
A
W
C
T
mb
= 25 C; V
GS
= 10 V
T
mb
= 100 C; V
GS
= 10 V
T
mb
= 25 C
T
mb
= 25 C
I
DM
P
D
T
j
, T
stg
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
E
AS
Non-repetitive avalanche
energy
CONDITIONS
Unclamped inductive load, I
= 6.5 A;
V
DD
≤
50 V; starting T
j
= 25C; R
GS
= 50
;
V
GS
= 10 V
MIN.
-
MAX.
570
UNIT
mJ
E
AR
I
AS
, I
AR
Repetitive avalanche energy
1
Repetitive and non-repetitive
avalanche current
-
-
9.5
6.5
mJ
A
d
g
s
1 2 3
tab
1
pulse width and repetition rate limited by T
j
max.
January 1998
1
Rev 1.000
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHP6ND50E 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors FREDFET, Avalanche energy rated
PHP-6P4C-5 制造商:POWER DYNAMICS 功能描述: 制造商:Power Dynamics Inc 功能描述:
PHP-6P6C-5 制造商:POWER DYNAMICS 功能描述: 制造商:Power Dynamics Inc 功能描述:
PHP71NQ03LT 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHP71NQ03LT,127 功能描述:MOSFET PHP71NQ03LT/SOT78/RAILH// RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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