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參數(shù)資料
| 型號(hào)： | PHB6N60E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistors Avalanche energy rated |
| 中文描述： | 5.4 A, 600 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SOT-404, 3 PIN |
| 文件頁(yè)數(shù)： | 4/9頁(yè) |
| 文件大?。?/td> | 74K |
| 代理商： | PHB6N60E |
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHP6N60E, PHB6N60E
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
mb
); conditions: V
GS
≥
10 V
Fig.3. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance
R
DS(ON)
= f(I
D
); parameter V
GS
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0.001
0.01
0.1
1
10
0
0.2
0.1
0.05
0.02
0.5
PHP6N60E
1ms
1s
Zth j-mb, Transient thermal impedance (K/W)
1us
10us
100us
tp, pulse width (s)
10ms 100ms
D =
t
p
t
p
T
T
P
t
D
0
20
40
60
80
100
120
140
Tmb / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0
5
10
15
20
25
30
0
2
4
6
8
10
6 V
6.5 V
PHP6N60E
VDS, Drain-Source voltage (Volts)
ID, Drain current (Amps)
Tj = 25 C
5.5 V
5 V
4.5 V
4 V
10 V
VGS = 20 V
10
100
1000
0.1
1
10
100
PHP6N60E
VDS, Drain-source voltage (Volts)
ID, Drain current (Amps)
RDS(ON) = VDS/ID
100us
1 ms
10 ms
0.1s
DC
10 us
tp =
0
2
4
6
8
10
1
1.5
2
2.5
3
3.5
4
6.5 V
10 V
PHP6N60E
ID, Drain current (Amps)
VGS = 20 V
6 V
5.5 V
5 V
4.5 V
Drain-source on resistance, RDS(on) (Ohms)
Tj = 25 C
December 1998
4
Rev 1.300
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