參數(shù)資料
型號: PF48F3P0ZBQ0
廠商: Intel Corp.
英文描述: Intel StrataFlash Embedded Memory
中文描述: 英特爾StrataFlash嵌入式存儲器
文件頁數(shù): 7/102頁
文件大?。?/td> 1609K
代理商: PF48F3P0ZBQ0
1-Gbit P30 Family
Datasheet
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
April 2005
7
1.0
Introduction
This document provides information about the Intel StrataFlash Embedded Memory (P30) device
and describes its features, operation, and specifications.
1.1
Nomenclature
1.2
Acronyms
1.8 V :
V
CC
(core) voltage range of 1.7 V – 2.0 V
V
CCQ
(I/O) voltage range of 1.7 V – 3.6 V
V
PP
voltage range of 8.5 V – 9.5 V
3.0 V :
9.0 V :
Block :
A group of bits, bytes,1-Gbit P30 Family or words within the
flash memory array that erase simultaneously when the Erase
command is issued to the device. The 1-Gbit P30 Family has
two block sizes: 32-KByte and 128-KByte.
Main block :
An array block that is usually used to store code and/or data.
Main blocks are larger than parameter blocks.
Parameter block :
An array block that is usually used to store frequently changing
data or small system parameters that traditionally would be
stored in EEPROM.
Top parameter device :
A device with its parameter blocks located at the highest
physical address of its memory map.
Bottom parameter device :
A device with its parameter blocks located at the lowest
physical address of its memory map.
BEFP :
Buffer Enhanced Factory Programming
CUI :
Command User Interface
MLC :
Multi-Level Cell
OTP :
One-Time Programmable
PLR :
Protection Lock Register
PR :
Protection Register
RCR :
Read Configuration Register
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