參數(shù)資料
型號： PF48F3P0ZBQ0
廠商： Intel Corp.
英文描述： Intel StrataFlash Embedded Memory
中文描述： 英特爾StrataFlash嵌入式存儲器
文件頁數(shù)： 31/102頁
文件大小： 1609K
代理商： PF48F3P0ZBQ0
1-Gbit P30 Family
Datasheet
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
April 2005
31
6.0
Electrical Specifications
6.1
DC Current Characteristics
Table 12. DC Current Characteristics (Sheet 1 of 2)
Sym
Parameter
CMOS
Inputs
(V
=
1.7 V - 3.6 V)
TTL Inputs
(V
CCQ
=
2.4 V - 3.6 V)
Unit
Test Conditions
Notes
Typ
Max
Typ
Max
I
LI
Input Load Current
-
±1
-
±2
μA
V
CC
= V
CC
Max
V
CCQ
= V
CCQ
Max
V
IN
CCQ
or V
SS
1
I
LO
Output
Leakage
Current
DQ[15:0], WAIT
-
±1
-
±10
μA
V
CC
= V
CC
Max
V
CCQ
= V
CCQ
Max
V
IN
CCQ
or V
SS
I
CCS
,
I
CCD
V
CC
Standby,
Power Down
64-Mbit
20
35
20
35
μA
V
CC
= V
CC
Max
V
CCQ
= V
CCQ
Max
CE# = V
CCQ
RST# = V
CCQ
(for I
CCS
)
RST# = V
SS
(for I
CCD
)
WP# = V
IH
1,2
128-Mbit
30
75
30
75
256-Mbit
55
115
55
200
512-Mbit
110
230
110
400
1-Gbit
220
460
220
800
I
CCR
Average
V
Read
Current
Asynchronous Single-
Word f = 5 MHz (1 CLK)
14
16
14
16
mA
1-Word
Read
V
CC
= V
CC
Max
CE# = V
IL
OE# = V
IH
Inputs: V
IL
or V
IH
1
Page-Mode Read
f = 13 MHz (5 CLK)
9
10
9
10
mA
4-Word
Read
Synchronous Burst
f = 40 MHz
13
17
n/a
n/a
mA
BL = 4W
15
19
n/a
n/a
mA
BL = 8W
17
21
n/a
n/a
mA
BL = 16W
21
26
n/a
n/a
mA
BL = Cont.
I
CCW,
I
CCE
V
CC
Program Current,
V
CC
Erase Current
36
51
36
51
mA
V
PP
= V
PPL
, pgm/ers in progress
1,3,4,7
26
33
26
33
V
PP
= V
PPH
, pgm/ers in progress
1,3,5,7
I
CCWS,
I
CCES
V
Program
Suspend Current,
V
Erase
Suspend Current
64-Mbit
20
35
20
35
μA
CE# = V
CCQ
; suspend in
progress
1,3,6
128-Mbit
30
75
30
75
256-Mbit
55
115
55
200
512-Mbit
110
230
110
400
1-Gbit
220
460
220
800
I
PPS,
I
PPWS,
I
PPES
V
PP
Standby Current,
V
PP
Program Suspend Current,
V
PP
Erase Suspend Current
0.2
5
0.2
5
μA
V
PP
= V
PPL
, suspend in progress
1,3
I
PPR
V
PP
Read
2
15
2
15
μA
V
PP
≤
V
CC
1,3
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