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參數(shù)資料
| 型號： | PF08103A |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone |
| 中文描述： | 場效應晶體管功率放大器模塊，電子GSM900和DCS1800和雙頻手持電話 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大小： | 42K |
| 代理商： | PF08103A |
PF08103A
6
Electrical Characteristics for DCS1800 mode
(Tc = 25
°
C)
Test conditions unless otherwise noted:
f = 1710 to 1785MHz, Vdd1 = Vdd2 = 4.8V, Pin = +4.5dBm, V
CTL
= 0.3V, V
CTL
= 2.0V, Rg = Rl = 50
,
Tc = 25
°
C, Pulse operation with pulse width 577
μ
s and duty cycle 1:8 shall be used.
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Frequency range
f
1710
—
1785
MHz
Control voltage range
Vapc
0.2
—
3.0
V
Vapc control current
Iapc
—
—
3
mA
Vapc = 3.0V
Total efficiency
η
T
33
36
—
%
Pout
DCS
= 31.5dBm,
2nd harmonic distortion
2nd H.D.
—
–45
–35
dBc
Vapc = control
3rd harmonic distortion
3rd H.D.
—
–45
–35
dBc
4th~8th harmonic distortion
4th~8th H.D.
—
—
–35
dBc
Input VSWR
VSWR (in)
—
3
5
—
Output power (1)
Pout (1)
32.5
33.0
—
dBm
Vapc = 3.0V
Output power (2)
Pout (2)
31
31.5
—
dBm
Vdd = 4.8V, Vapc = 3.0V,
Tc = +85
°
C, Pin = +3dBm
Isolation
—
—
–35
–30
dBm
Vapc = 0.2V
Switching time
tr, tf
—
1
2
μ
s
Pout
DCS
= –15 to 32.0dBm
Stability
—
No parasitic oscillation
—
V
DD
= 4.2 to 6.3V, Pout
DCS
≤
32.5dBm,
Vapc
≤
3.0V DCS pulse.
Rg = 50
, Tc = –20 to +85
°
C,
Output VSWR = 6 : 1 All phases
Load VSWR tolerance
—
No degradation
—
V
DD
= 4.2 to 6.3V, Pout
DCS
≤
32.5dBm,
Vapc
≤
3.0V DCS pulse. Rg = 50
,
t = 30sec., Tc = –20 to +85
°
C,
Output VSWR = 10 : 1 All phases
Noise power
Pnoise1
—
—
–77
dBm
f0 = 1785MHz, frx = f0 +20MHz,
Pout
DCS
= 31.5dBm, RES BW = 30kHz
Pnoise2
—
—
–74
dBm
frx = 925 to 935MHz,
Pout
DCS
= 31.5dBm, RES BW = 30kHz
Pnoise3
—
—
–85
dBm
frx = 935 to 960MHz,
Pout
DCS
= 31.5dBm, RES BW = 30kHz
Slope Pout/Vapc
—
—
—
200
dB/V
Pout
DCS
= 0 to 32.0dBm
Intermodulation
—
—
—
–20
dBm
Pout = 31.5dBm,
Interferer.CW f0 +800kHz,
Pinterfer = –9dBm, RES BW = 300kHz,
Measure at f0 –800kHz
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