![](http://datasheet.mmic.net.cn/390000/PF5000_datasheet_16827230/PF5000_1.png)
PF5000 – PF5010
1 of 2 2002 Won-Top Electronics
PF5000 – PF5010
50A 1/2" PRESS-FIT DIODE
Features
!
Diffused Junction
!
Low Leakage
!
Low Cost A
!
High Surge Current Capability
!
Typical I
R
less than 10μA
Mechanical Data
!
Case: All Copper Case and Components
Hermetically Sealed D
Terminals: Contact Areas Readily Solderable
Polarity: Cathode to Case(Reverse Units Are C
Available Upon Request and Are Designated G
By An “R” Suffix, i.e. PF5002R or PF5010R)
Polarity: Red Color Equals Standard, E
Black Color Equals Reverse Polarity
Mounting Position: Any F
B
!
!
!
!
Maximum Ratings and Electrical Characteristics
@T
A
=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
PF5000 PF5001 PF5002 PF5004 PF5006 PF5008 PF5010
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
50
100
200
400
600
800
1000
V
RMS Reverse Voltage
V
R(RMS)
35
70
140
280
420
560
700
V
Average Rectified Output Current @T
A
= 150°C
I
O
50
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
I
FSM
500
A
Forward Voltage @I
F
= 100A
V
FM
1.08
V
Peak Reverse Current @T
= 25°C
At Rated DC Blocking Voltage @T
A
= 100°C
I
RM
10
500
μA
Typical Junction Capacitance (Note 1)
C
j
300
pF
Typical Thermal Resistance Junction to Case
(Note 2)
R
JC
1.2
K/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +175
°C
*Glass passivated forms are available upon request
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal Resistance: Junction to case, single side cooled.
W TE
POWER SEMICONDUCTORS
DO-21
Min
15.63
12.75
8.89
1.25
3.05
5.59
28.82
Dim
A
B
C
D
E
F
G
All Dimensions in mm
Max
16.14
12.83
10.04
1.30
3.30
6.1
—