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參數(shù)資料
| 型號： | PF08103A |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone |
| 中文描述： | 場效應(yīng)晶體管功率放大器模塊，電子GSM900和DCS1800和雙頻手持電話 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 42K |
| 代理商： | PF08103A |
PF08103A
5
Electrical Characteristics for GSM900 mode
(Tc = 25
°
C)
Test conditions unless otherwise noted:
f = 880 to 915MHz, Vdd1 = Vdd2 = 4.8V, Pin = +4.5dBm, V
CTL
= 2.0V, V
CTL
= 0.3V, Rg = Rl = 50
,
Tc = 25
°
C, Pulse operation with pulse width 577
μ
s and duty cycle 1:8 shall be used.
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Frequency range
f
880
—
915
MHz
Control voltage range
Vapc
0.2
—
3.0
V
Vapc control current
Iapc
—
—
3
mA
Vapc = 3.0V
Total efficiency
η
T
43
48
—
%
Pout
GSM
= 34.5dBm,
2nd harmonic
distortion
2nd H.D.
—
–45
–35
dBc
Vapc = control
3rd harmonic distortion
3rd H.D.
—
–45
–35
dBc
4th~8th harmonic distortion
4th~8th H.D.
—
—
–35
dBc
Input VSWR
VSWR (in)
—
2
3
—
Output power (1)
Pout (1)
35.0
35.7
—
dBm
Vapc = 3.0V
Output power (2)
Pout (2)
33.0
34.0
—
dBm
Vdd = 4.2V, Vapc = 3.0V,
Tc = +85
°
C, Pin = +3dBm
Isolation
—
—
–40
–20
dBm
Vapc = 0.2 V
Isolation at
DCS RF-output
when GSM is active
—
—
–30
–20
dBm
Pout
GSM
= 34.5dBm (GSM mode)
Measured at f = 1760 to 1830MHz
Switching time
tr, tf
—
1
2
μ
s
Pout
GSM
= –15 to 35.0dBm
Stability
—
No parasitic oscillation
All spuriouses < –36 dBm
—
V
DD
= 4.2 to 6.3V, Pout
≤
35.0dBm,
Vapc
≤
3.0V GSM pulse.
Rg = 50
, Tc = –20 to +85
°
C,
Output VSWR = 6 : 1 All phases,
RES BW = 3MHz
Load VSWR tolerance
—
No degradation
or
Permanent degradation
—
V
DD
= 4.2 to 6.3V,
Pout
GSM
≤
35.0dBm,
Vapc
≤
3.0V GSM pulse. Rg = 50
,
t = 30sec., Tc = –20 to +85
°
C,
Output VSWR = 10 : 1 All phases
Noise power
Pnoise1
—
—
–73
dBm
f0 = 915MHz, frx = f0 +10MHz
Pout
GSM
= 35dBm, RES BW = 100kHz
Pnoise2
—
—
–85
dBm
f0 = 915MHz, frx = f0 +20MHz
Pout
GSM
= 35dBm, RES BW = 100kHz
Pnoise3
—
—
–77
dBm
frx = 1805 to 1880MHz
Pout
GSM
= 35dBm, RES BW = 100kHz
Slope Pout/Vapc
—
—
—
200
dB/V
Pout
GSM
= 0 to 35dBm
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