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參數(shù)資料
| 型號： | PC28F256J3C-125 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | Intel StrataFlash Memory (J3) |
| 中文描述： | 16M X 16 FLASH 2.7V PROM, 125 ns, PBGA64 |
| 封裝： | LEAD FREE, BGA-64 |
| 文件頁數(shù)： | 37/72頁 |
| 文件大?。?/td> | 905K |
| 代理商： | PC28F256J3C-125 |
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256-Mbit J3 (x8/x16)
Datasheet
37
10.0
Read Operations
The device supports four types of read modes: Read Array, Read Identifier, Read Status, and CFI
query. Upon power-up or return from reset, the device defaults to read array mode. To change the
device’s read mode, the appropriate read-mode command must be written to the device. (See
Section 9.2, “Device Commands” on page 35
.) See
Section 14.0, “Special Modes” on page 50
for
details regarding read status, read ID, and CFI query modes.
Upon initial device power-up or after exit from reset/power-down mode, the device automatically
resets to read array mode. Otherwise, write the appropriate read mode command (Read Array, Read
Query, Read Identifier Codes, or Read Status Register) to the CUI. Six control signals dictate the
data flow in and out of the component: CE0, CE1, CE2, OE#, WE#, and RP#. The device must be
enabled (see
Table 13, “Chip Enable Truth Table” on page 33
obtain data at the outputs. CE0, CE1, and CE2 are the device selection controls and, when enabled
(see
Table 13
), select the memory device. OE# is the data output (D[15:0]) control and, when
active, drives the selected memory data onto the I/O bus. WE# must be at V
IH
.
10.1
Read Array
Upon initial device power-up and after exit from reset/power-down mode, the device defaults to
read array mode. The device defaults to four-word asynchronous read page mode. The Read Array
command also causes the device to enter read array mode. The device remains enabled for reads
until another command is written. If the internal WSM has started a block erase, program, or lock-
bit configuration, the device will not recognize the Read Array command until the WSM completes
its operation unless the WSM is suspended via an Erase or Program Suspend command. The Read
Array command functions independently of the V
PEN
voltage.
10.1.1
Asynchronous Page Mode Read
There are two Asynchronous Page mode configurations that are available depending on the user’s
system design requirements:
Four-Word Page mode: This is the default mode on power-up or reset. Array data can be
sensed up to four words (8 Bytes) at a time.
Eight-Word Page mode: Array data can be sensed up to eight words (16 Bytes) at a time. This
mode must be enabled on power-up or reset by using the command sequence found in
Table 14, “Command Bus-Cycle Definitions” on page 35
. Address bits A[3:1] determine
which word is output during a read operation, and A[3:0] determine which byte is output for a
x8 bus width.
After the initial access delay, the first word out of the page buffer corresponds to the initial address.
In Four-Word Page mode, address bits A[2:1] determine which word is output from the page buffer
for a x16 bus width, and A[2:0] determine which byte is output from the page buffer for a x8 bus
width. Subsequent reads from the device come from the page buffer. These reads are output on
D[15:0] for a x16 bus width and D[7:0] for a x8 bus width after a minimum delay as long as A[2:0]
(Four-Word Page mode) or A[3:0] (Eight-Word Page mode) are the only address bits that change.
Data can be read from the page buffer multiple times, and in any order. In Four-Word Page Mode,
if address bits A[MAX:3] (A[MAX:4] for Eight-Word Page Mode) change at any time, or if CE# is
toggled, the device will sense and load new data into the page buffer. Asynchronous Page Mode is
the default read mode on power-up or reset.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| PC28F256J3C125 S B93 | 制造商:Intel 功能描述: |
| PC28F256J3C-150 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Memory (J3) |
| PC28F256J3D95A | 功能描述:IC FLASH 256MBIT 95NS 64EZBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應商設備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| PC28F256J3D95B | 功能描述:IC FLASH 256MBIT 95NS 64EZBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應商設備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| PC28F256J3F950 | 制造商:Micron Technology Inc 功能描述:256MB, TURLOCK EBGA 3.0 LF - Trays |
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