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參數(shù)資料
| 型號： | PBRP113ZT,215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP 800 mA, 40 V BISS RET; R1 = 1 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| 中文描述： | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, SMD, 3 PIN |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 115K |
| 代理商： | PBRP113ZT,215 |
1.
Product prole
1.1 General description
800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped
Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic
package.
NPN complement: PBRN113ZT.
1.2 Features
1.3 Applications
1.4 Quick reference data
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
collector 1 cm2.
[2]
Device mounted on a ceramic PCB, Al2O3, standard footprint.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
PBRP113ZT
PNP 800 mA, 40 V BISS RET; R1 = 1 k
, R2 = 10 k
Rev. 01 — 16 January 2008
Product data sheet
I 800 mA repetitive peak output current
I Low collector-emitter saturation voltage
VCEsat
I High current gain hFE
I Reduces component count
I Built-in bias resistors
I Reduces pick and place costs
I Simplies circuit design
I ±10 % resistor ratio tolerance
I Digital application in automotive and
industrial segments
I Switching loads
I Medium current peripheral driver
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter voltage
open base
-
40
V
IO
output current
[1][2] --
600
mA
IORM
repetitive peak output current
tp ≤ 1 ms;
δ≤ 0.33
[3] --
800
mA
R1
bias resistor 1 (input)
0.7
1
1.3
k
R2/R1
bias resistor ratio
9
10
11
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相關代理商/技術參數(shù) |
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|---|---|
| PBRP123ES AMO | 功能描述:開關晶體管 - 偏壓電阻器 BISS RETS RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| PBRP123ES,126 | 功能描述:開關晶體管 - 偏壓電阻器 BISS RETS RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| PBRP123ET | 制造商:NXP Semiconductors 功能描述:TRANSISTORPNPW/RES40V0.8ASOT23 制造商:NXP Semiconductors 功能描述:TRANSISTOR,PNP,W/RES,40V,0.8A,SOT23 |
| PBRP123ET T/R | 功能描述:開關晶體管 - 偏壓電阻器 BISS RET RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| PBRP123ET,215 | 功能描述:開關晶體管 - 偏壓電阻器 BISS RET RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
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