參數資料
型號: PA28F008SC-85
廠商: INTEL CORP
元件分類: PROM
英文描述: BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT
中文描述: 1M X 8 FLASH 3.3V PROM, 85 ns, PDSO44
封裝: 13.30 X 28.20 MM, PLASTIC, SOP-44
文件頁數: 17/33頁
文件大小: 466K
代理商: PA28F008SC-85
28F008SA
290429–10
Bus
Command
Comments
Operation
Write
Erase
Suspend
Data
e
B0H
Write
Read
Data
e
70H
Status Register
Standby/
Read
Check RY/BY
Y
V
OH
e
Ready, V
OL
e
Busy or Read Status
Register
Check SR.7
1
e
Ready, 0
e
Busy
Toggle OE
Y
or CE
Y
to
Update Status Register
Standby
Check SR.6
1
e
Suspended
Write
Read Array
Data
e
FFH
Read
Read array data from block
other than that being
erased.
Write
Erase Resume
Data
e
D0H
Figure 9. Erase Suspend/Resume Flowchart
Power Supply Decoupling
Flash memory power switching characteristics re-
quire careful device decoupling. System designers
are interested in 3 supply current issues; standby
current levels (I
SB
), active current levels (I
CC
) and
transient peaks produced by falling and rising edges
of CE
Y
. Transient current magnitudes depend on
the device outputs’ capacitive and inductive loading.
Two-line control and proper decoupling capacitor
selection will suppress transient voltage peaks.
Each device should have a 0.1
m
F ceramic capacitor
connected between each V
CC
and GND, and be-
tween its V
PP
and GND. These high frequency, low
inherent-inductance capacitors should be placed as
close as possible to package leads. Additionally, for
every 8 devices, a 4.7
m
F electrolytic capacitor
should be placed at the array’s power supply con-
nection between V
CC
and GND. The bulk capacitor
will overcome voltage slumps caused by PC board
trace inductances.
V
PP
Trace on Printed Circuit Boards
Writing flash memories, while they reside in the tar-
get system, requires that the printed circuit board
designer pay attention to the V
PP
power supply
trace. The V
PP
pin supplies the memory cell current
for writing and erasing. Use similar trace widths and
layout considerations given to the V
CC
power bus.
Adequate V
PP
supply traces and decoupling will de-
crease V
PP
voltage spikes and overshoots.
17
相關PDF資料
PDF描述
PA28F008SA-120 8-MBIT (1-MBIT x 8) FlashFileTM MEMORY
PA28F008SC-120 BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT
PA34 POWER OPERATIONAL AMPLIFIERS
PA44 HIGH VOLTAGE POWER OPERATIONAL AMPLIFIER
PA7540JI-15 PA7540 PEEL Array? Programmable Electrically Erasable Logic Array
相關代理商/技術參數
參數描述
PA28F016S5-120 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT
PA28F016S5-95 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT
PA28F016SC-120 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:BYTE-WIDE SmartVoltage FlashFile⑩ MEMORY FAMILY 4, 8, AND 16 MBIT
PA28F016SC-95 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:BYTE-WIDE SmartVoltage FlashFile⑩ MEMORY FAMILY 4, 8, AND 16 MBIT
PA28F200B5B60 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT