參數(shù)資料
型號(hào): PA28F008SA-120
廠商: INTEL CORP
元件分類: PROM
英文描述: 8-MBIT (1-MBIT x 8) FlashFileTM MEMORY
中文描述: 1M X 8 FLASH 12V PROM, 120 ns, PDSO44
封裝: 0.525 X 1.110 INCH, PLASTIC, SOP-44
文件頁(yè)數(shù): 22/33頁(yè)
文件大小: 466K
代理商: PA28F008SA-120
28F008SA
DC CHARACTERISTICS: EXTENDED TEMPERATURE OPERATION
(Continued)
Symbol
Parameter
Notes
Min
Typ
Max
Unit
Test Condition
V
IL
Input Low Voltage
b
0.5
0.8
V
V
IH
Input High Voltage
2.0
V
CC
a
0.5
V
V
OL
Output Low Voltage
3
0.45
V
V
CC
e
V
CC
Min
I
OL
e
5.8 mA
V
CC
e
V
CC
Min
I
OH
e b
2.5 mA
I
OH
e b
2.5
m
A
V
CC
e
V
CC
Min
I
OH
e b
100
m
A
V
CC
e
V
CC
Min
V
OH1
Output High Voltage
(TTL)
3
2.4
V
V
OH2
Output High Voltage
(CMOS)
0.85 V
CC
V
V
CC
b
0.4
V
PPL
V
PP
during Normal
Operations
4
0.0
6.5
V
V
PPH
V
PP
during Erase/Write
Operations
11.4
12.0
12.6
V
V
LKO
V
CC
Erase/Write Lock
Voltage
2.0
V
CAPACITANCE
(5)
T
A
e
25
§
C, f
e
1 MHz
Symbol
Parameter
Typ
Max
Unit
Condition
C
IN
Input Capacitance
6
8
pF
V
IN
e
0V
V
OUT
e
0V
C
OUT
Output Capacitance
8
12
pF
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at V
CC
e
5.0V, V
PP
e
12.0V, T
e
25
§
C. These currents
are valid for all product versions (packages and speeds).
2. I
CCES
is specified with the device deselected. If the 28F008SA is read while in Erase Suspend Mode, current draw is the
sum of I
CCES
and I
CCR
.
3. Includes RY/BY
Y
.
4. Block Erases/Byte Writes are inhibited when V
PP
e
V
PPL
and not guaranteed in the range between V
PPH
and V
PPL
.
5. Sampled, not 100% tested.
22
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