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參數(shù)資料
| 型號(hào)： | PA28F008SA-120 |
| 廠商： | INTEL CORP |
| 元件分類(lèi)： | PROM |
| 英文描述： | 8-MBIT (1-MBIT x 8) FlashFileTM MEMORY |
| 中文描述： | 1M X 8 FLASH 12V PROM, 120 ns, PDSO44 |
| 封裝： | 0.525 X 1.110 INCH, PLASTIC, SOP-44 |
| 文件頁(yè)數(shù)： | 17/33頁(yè) |
| 文件大?。?/td> | 466K |
| 代理商： | PA28F008SA-120 |
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28F008SA
290429–10
Bus
Command
Comments
Operation
Write
Erase
Suspend
Data
e
B0H
Write
Read
Data
e
70H
Status Register
Standby/
Read
Check RY/BY
Y
V
OH
e
Ready, V
OL
e
Busy or Read Status
Register
Check SR.7
1
e
Ready, 0
e
Busy
Toggle OE
Y
or CE
Y
to
Update Status Register
Standby
Check SR.6
1
e
Suspended
Write
Read Array
Data
e
FFH
Read
Read array data from block
other than that being
erased.
Write
Erase Resume
Data
e
D0H
Figure 9. Erase Suspend/Resume Flowchart
Power Supply Decoupling
Flash memory power switching characteristics re-
quire careful device decoupling. System designers
are interested in 3 supply current issues; standby
current levels (I
SB
), active current levels (I
CC
) and
transient peaks produced by falling and rising edges
of CE
Y
. Transient current magnitudes depend on
the device outputs’ capacitive and inductive loading.
Two-line control and proper decoupling capacitor
selection will suppress transient voltage peaks.
Each device should have a 0.1
m
F ceramic capacitor
connected between each V
CC
and GND, and be-
tween its V
PP
and GND. These high frequency, low
inherent-inductance capacitors should be placed as
close as possible to package leads. Additionally, for
every 8 devices, a 4.7
m
F electrolytic capacitor
should be placed at the array’s power supply con-
nection between V
CC
and GND. The bulk capacitor
will overcome voltage slumps caused by PC board
trace inductances.
V
PP
Trace on Printed Circuit Boards
Writing flash memories, while they reside in the tar-
get system, requires that the printed circuit board
designer pay attention to the V
PP
power supply
trace. The V
PP
pin supplies the memory cell current
for writing and erasing. Use similar trace widths and
layout considerations given to the V
CC
power bus.
Adequate V
PP
supply traces and decoupling will de-
crease V
PP
voltage spikes and overshoots.
17
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PA28F008SC-120 | BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT |
| PA34 | POWER OPERATIONAL AMPLIFIERS |
| PA44 | HIGH VOLTAGE POWER OPERATIONAL AMPLIFIER |
| PA7540JI-15 | PA7540 PEEL Array? Programmable Electrically Erasable Logic Array |
| PA7540JN-15 | PA7540 PEEL Array? Programmable Electrically Erasable Logic Array |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PA28F008SA85 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Intel 功能描述: |
| PA28F008SA-85 | 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:8-MBIT (1-MBIT x 8) FlashFileTM MEMORY |
| PA28F008SA-L200 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8 Flash EEPROM |
| PA28F008SA-L250 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8 Flash EEPROM |
| PA28F008SC-120 | 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:BYTE-WIDE SmartVoltage FlashFile⑩ MEMORY FAMILY 4, 8, AND 16 MBIT |
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