參數(shù)資料
型號(hào): P89LPC917
廠商: NXP Semiconductors N.V.
英文描述: 8-bit microcontrollers with accelerated two-clock 80C51 core 2 kB 3 V Flash with 8-bit A/D converter
中文描述: 8 - 8加速雙位單片機(jī)80C51的時(shí)鐘核心2 Kb的3伏閃存位A / D轉(zhuǎn)換器
文件頁數(shù): 57/72頁
文件大?。?/td> 344K
代理商: P89LPC917
Philips Semiconductors
P89LPC915/916/917
8-bit microcontrollers with accelerated two-clock 80C51 core
Product data
Rev. 04 — 17 December 2004
57 of 72
9397 750 14397
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
11. Static characteristics
Table 13:
V
DD
= 2.4 V to 3.6 V unless otherwise specified.
T
amb
=
40
°
C to +85
°
C for industrial,
40
°
C to +125
°
C extended, unless otherwise specified.
Symbol
Parameter
Conditions
I
DD(oper)
power supply current,
operating
3.6 V; 18 MHz
I
DD(idle)
power supply current, Idle
mode
3.6 V; 18 MHz
I
DD(PD)
power supply current,
Power-down mode, voltage
comparators powered-down
I
DD(TPD)
power supply current, total
Power-down mode
3.6 V, extended
(dV
DD
/dt)
r
V
DD
rise rate
(dV
DD
/dt)
f
V
DD
fall rate
V
RAM
RAM keep-alive voltage
V
th(HL)
negative-going threshold
voltage (Schmitt trigger input)
V
th(LH)
positive-going threshold
voltage (Schmitt trigger input)
V
hys
hysteresis voltage
V
OL
low-level output voltage,
all ports
I
OL
= 10 mA
I
OL
= 3.2 mA
V
OH
high-level output voltage,
all ports
push-pull mode
I
OH
=
3.2 mA;
push-pull mode
I
OH
=
20
μ
A;
quasi-bidirectional mode
C
ig
input-ground capacitance
I
IL
logical 0 input current,
all ports
I
LI
input leakage current, all ports V
IN
= V
IL
or V
IH
I
TL
logical 1-to-0 transition
current, all ports
V
DD
= 3.6 V
R
RST
internal reset pull-up resistor
V
BO
brownout trip voltage with
BOV = 1, BOPD = 0
DC electrical characteristics
Min
Typ
[1]
7
11
3.6
4
45
-
Max
13
16
4.8
6
70
150
Unit
mA
mA
mA
mA
μ
A
μ
A
3.6 V; 12 MHz
[2]
-
[2]
-
3.6 V; 12 MHz
[2]
-
[2]
-
3.6 V, industrial
3.6 V, extended
[2]
-
[2]
-
3.6 V, industrial
[2]
-
< 0.1
-
-
-
-
0.4V
DD
5
50
2
50
-
-
μ
A
μ
A
mV/
μ
s
mV/
μ
s
V
V
[2]
-
-
-
1.5
0.22V
DD
-
0.6V
DD
0.7V
DD
V
-
-
-
-
V
DD
1
0.2V
DD
0.6
0.3
0.2
-
-
1.0
0.5
0.3
-
V
V
V
V
V
I
OL
= 20 mA
I
OH
=
8 mA;
V
DD
0.7
V
DD
0.4
-
V
V
DD
0.3
V
DD
0.2
-
V
[3]
-
-
-
15
80
pF
μ
A
V
IN
= 0.4 V
[4]
-
[5]
-
-
-
±
10
450
μ
A
μ
A
V
IN
= 2.0 V at
[6][7]
30
10
2.40
-
-
30
2.70
k
V
2.4 V < V
DD
< 3.6 V
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