參數(shù)資料
型號: P83CE560EFB
廠商: NXP Semiconductors N.V.
英文描述: NPN Silicon Power Transistor, TO-220F-3SL
中文描述: 8位微控制器
文件頁數(shù): 63/84頁
文件大?。?/td> 441K
代理商: P83CE560EFB
1997 Aug 01
63
Philips Semiconductors
Product specification
8-bit microcontroller
P8xCE560
V
HYS
hysteresis of Schmitt Trigger inputs
SCL and SDA (Fast Mode)
RST pull-down resistor
I/O pin capacitance
0.05V
DD(20)
V
R
RST
C
I/O
50
150
10
k
pF
test frequency = 1 MHz;
T
amb
= 25
°
C
Supply (analog part)
V
DDA
I
DDA
supply voltage
supply current operating
V
DDA
= V
DD
±
0.2 V
Port 5 = 0 V to V
DDA
;
notes 1 and 2
Port 5 = 0 V to V
DDA
;
notes 17 and 18
notes 1 and 3
notes 17 and 18
4.5
5.5
1.2
V
mA
supply current operating
32 kHz / PLL operation
supply current Idle mode
supply current Idle mode
32 kHz / PLL operation
supply current Power-down mode
supply current Power-down mode
32 kHz/PLL operation
7.2
mA
I
DDA(ID)
70
6.0
μ
A
mA
I
DDA(PD)
2 V < V
DD
<V
DD(max)
; note 4
V
DD
= 5.5 V; note 17
50
200
μ
A
μ
A
Analog inputs
V
in(A)
V
ref(n)(A)
V
ref(p)(A)
R
REF
analog input voltage
reference voltage
V
SSA
0.2
V
SSA
0.2
10
V
DDA
+ 0.2
V
DDA
+ 0.2
50
V
V
V
k
resistance between
V
ref(p)(A)
and V
ref(n)(A)
analog input capacitance
differential non-linearity
integral non-linearity
offset error
gain error
absolute voltage error
channel-to-channel matching
crosstalk between P5 inputs
C
IA
DL
e
IL
e
OS
e
G
e
A
e
M
ctc
C
t
15
±
1
±
2
±
2
±
0.4
±
3
±
1
60
pF
LSB
LSB
LSB
%
LSB
LSB
dB
notes 9, 10 and 11
notes 9 and 12
notes 9 and 13
notes 9 and 14
notes 9 and 15
0 to 100 kHz; note 16
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
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