參數(shù)資料
型號(hào)： P83CE560EFB
廠商： NXP Semiconductors N.V.
英文描述： NPN Silicon Power Transistor, TO-220F-3SL
中文描述： 8位微控制器
文件頁數(shù)： 61/84頁
文件大?。?/td> 441K
代理商： P83CE560EFB
1997 Aug 01
61
Philips Semiconductors
Product specification
8-bit microcontroller
P8xCE560
20 LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); note 1
Notes
1.
The following applies to the Absolute Maximum Ratings:
a) Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This
is a stress rating only and functional operation of the device at these or any conditions other than those described
in the Chapters 21 and 22 of this specification is not implied.
b) This product includes circuitry specifically designed for the protection of its internal devices from the damaging
effect of excessive static charge. However, its suggested that conventional precautions be taken to avoid
applying greater than the rated maxima.
c) Parameters are valid over operating temperature range unless otherwise specified. All voltages are with respect
to V
SS
unless otherwise noted.
This value is based on the maximum allowable die temperature and the thermal resistance of the package, not on
device power consumption.
2.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
DD
V
I
voltage on V
DD
to V
SS
and SCL, SDA to V
SS
input voltage on:
any other pin to V
SS
EA/V
PP
to V
SS
input/output current on any I/O pin
total power dissipation (note 2)
storage temperature range
operating ambient temperature range:
P8xCE560EFB
0.5
+6.5
V
0.5
0.5
65
V
DD
+ 0.5
+13
±
10
1.0
+150
V
V
mA
W
°
C
I
I
, I
O
P
tot
T
stg
T
amb
40
+85
°
C
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