參數(shù)資料
型號: NZQA6V8AXV5
廠商: ON SEMICONDUCTOR
英文描述: Low Capacitance Quad Array for ESD Protection(用于進(jìn)行ESD保護(hù)的低容抗方形陣列)
中文描述: 四低電容ESD保護(hù)陣列(用于進(jìn)行靜電放電保護(hù)的低容抗方形陣列)
文件頁數(shù): 2/4頁
文件大?。?/td> 49K
代理商: NZQA6V8AXV5
NZQA5V6AXV5 Series
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
V
BR
Maximum Temperature Coefficient of V
BR
I
F
Forward Current
V
F
Forward Voltage @ I
F
Z
ZT
Maximum Zener Impedance @ I
ZT
I
ZK
Reverse Current
Z
ZK
Maximum Zener Impedance @ I
ZK
UniDirectional
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Value
Unit
Peak Power Dissipation (8 X 20 s @ T
A
= 25
°
C) (Note 1)
P
PK
20
W
Steady State Power 1 Diode (Note 2)
P
D
380
mW
Thermal Resistance, JunctiontoAmbient
Above 25
°
C, Derate
R
JA
327
3.05
°
C/W
mW/
°
C
Maximum Junction Temperature
T
Jmax
150
°
C
Operating Junction and Storage Temperature Range
T
J
T
stg
55 to +150
°
C
Lead Solder Temperature (10 seconds duration)
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
Device
Device
Marking
Breakdown Voltage
V
BR
@ 1 mA (Volts)
Leakage Current
I
RM
@ V
RM
V
C
Max @ I
PP
Typ Capacitance
@ 0 V Bias (pF)
(Note 3)
Typ Capacitance
@ 3 V Bias (pF)
(Note 3)
Min
Nom
Max
V
RWM
I
RWM
( A)
V
C
(V)
I
PP
(A)
Typ
Max
Typ
Max
NZQA5V6AXV5
5P
5.3
5.6
5.9
3.0
1.0
13
1.6
13
17
7.0
11.5
NZQA6V8AXV5
6H
6.47
6.8
7.14
4.3
1.0
13
1.6
12
15
6.7
9.5
1. Nonrepetitive current per Figure 1.
2. Only 1 diode under power. For all 4 diodes under power, P
D
will be 25%. Mounted on FR4 board with min pad.
3. Capacitance of one diode at f = 1 MHz, V
R
= 0 V, T
A
= 25
°
C
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參數(shù)描述
NZQA6V8AXV5T 制造商:ON Semiconductor 功能描述:
NZQA6V8AXV5T1 功能描述:TVS二極管陣列 Low Cap. TVS Quad RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風(fēng)格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C
NZQA6V8AXV5T1G 功能描述:TVS二極管陣列 Low Cap. TVS Quad Array for ESD RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風(fēng)格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C
NZQA6V8AXV5T2 功能描述:TVS二極管陣列 LOW CAP ZENER QUA RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風(fēng)格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C
NZQA6V8AXV5T2G 功能描述:TVS二極管陣列 Quad TVS Array for ESD Protection RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風(fēng)格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C