- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363714 > NTY100N10 (ON SEMICONDUCTOR) Power MOSFET 123A, 100V N Channel Enhancement Mode TO264 Package(123A，100V雙功率MOSFET) PDF資料下載
參數(shù)資料
| 型號(hào)： | NTY100N10 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 123A, 100V N Channel Enhancement Mode TO264 Package(123A，100V雙功率MOSFET) |
| 中文描述： | 123 A, 100 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封裝： | CASE 340G-02 STYLE 1, TO-3BPL, TO-264, 3 PIN |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 157K |
| 代理商： | NTY100N10 |
Semiconductor Components Industries, LLC, 2006
March, 2006
Rev. 2
1
Publication Order Number:
NTY100N10/D
NTY100N10
Preferred Device
Power MOSFET 123 A,
100 V NChannel
EnhancementMode TO264
Package
Features
Source
to
Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Avalanche Energy Specified
IDSS and R
DS(on)
Specified at Elevated Temperature
Pb
Free Package is Available*
Applications
PWM Motor Control
Power Supplies
Converters
MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain
Source Voltage
V
DSS
100
V
Drain
Gate Voltage (R
GS
= 1 M )
V
DGR
100
V
Gate
Source Voltage
Continuous
Non
Repetitive (t
p
10 ms)
V
GS
V
GSM
20
40
V
V
Drain Current (Note 1)
Continuous @ T
C
= 25
°
C
Pulsed
I
D
I
DM
123
369
A
A
Total Power Dissipation (Note 1)
Derate above 25
°
C
P
D
313
2.5
Watts
W/
°
C
Operating and Storage Temperature Range
T
J
, T
stg
55 to
150
°
C
Single Pulse Drain
to
Source
Avalanche Energy
Starting T
J
= 25
°
C
(V
DD
= 80 Vdc, V
GS
= 10 Vdc,
Peak I
L
= 100 Apk, L = 0.1 mH, R
G
= 25 )
E
AS
500
mJ
Thermal Resistance
Junction to Case
Junction to Ambient
R
JC
R
JA
0.4
25
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 0.125 in from case for 10 seconds
T
L
260
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 10 s, Duty
Cycle = 2%.
*For additional information on our Pb
Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
Preferred
devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
NTY100N10
TO
264
25 Units/Rail
123 A, 100 V
9 m @ V
GS
= 10 V (Typ)
D
G
N
Channel
S
MARKING DIAGRAM &
PIN ASSIGNMENT
NTY100N10
AYYWWG
A
YY
WW
G
= Assembly Location
= Year
= Work Week
= Pb
Free Package
TO
264
CASE 340G
STYLE 1
1
23
1
G
2
D
3
S
NTY100N10G
TO
264
(Pb
Free)
25 Units/Rail
http://onsemi.com
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NTZD3152P | Small Signal MOSFET 20V, 430mA, Dual P Channel with ESD Protection, SOT563(20V，430mA雙功率MOSFET) |
| NTZD3154N | 20V,540mA,Dual N Channel Small Signal MOSFET(20V,540mA,雙N溝道小信號(hào)MOSFET) |
| NTZD3155C | Small Signal MOSFET Complementary 20V, 540mA/430mA, with ESD protection, SOT563 package.(20V，540mA/430mA雙功率MOSFET帶ESD保護(hù)) |
| NTZS3151P | Small Signal MOSFET 20V, 950mA, P Channel SOT563(20V，950mA雙功率MOSFET帶ESD保護(hù)) |
| NUD3105D | Integrated Relay, Inductive Load Driver |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTY100N10_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 123 A, 100 V N−Channel Enhancement−Mode TO264 Package |
| NTY100N10G | 功能描述:MOSFET 100V 123A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTZA3DVV2 | 制造商:Omron Corporation 功能描述: |
| NTZD3151P | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High Efficiency DC-DC Converters |
| NTZD3152P | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Small Signal MOSFET −20 V, −430 mA, Dual P−Channel with ESD Protection, SOT−563 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。