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參數(shù)資料
| 型號： | NTZD3154N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | 20V,540mA,Dual N Channel Small Signal MOSFET(20V,540mA,雙N溝道小信號MOSFET) |
| 中文描述： | 20V的，五百四十零毫安，雙N通道小信號MOSFET（20V的，五百四十零毫安，雙?溝道小信號MOSFET的） |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 139K |
| 代理商： | NTZD3154N |
Semiconductor Components Industries, LLC, 2006
March, 2006
Rev. 1
1
Publication Order Number:
NTZD3154N/D
NTZD3154N
Small Signal MOSFET
20 V, 540 mA, Dual N
Channel
Features
Low R
DS(on)
Improving System Efficiency
Low Threshold Voltage
Small Footprint 1.6 x 1.6 mm
ESD Protected Gate
These are Pb
Free Devices
Applications
Load/Power Switches
Power Supply Converter Circuits
Battery Management
Cell Phones, Digital Cameras, PDAs, Pagers, etc.
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted.)
Parameter
Symbol
Value
Unit
Drain
to
Source Voltage
V
DSS
V
GS
20
V
Gate
to
Source Voltage
±
6.0
V
Continuous Drain Current
(Note 1)
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
I
D
540
mA
390
Power Dissipation
(Note 1)
Steady State
P
D
250
mW
Continuous Drain Current
(Note 1)
t
5 s
T
A
= 25
°
C
T
A
= 85
°
C
I
D
570
mA
410
Power Dissipation
(Note 1)
t
5 s
P
D
280
mW
Pulsed Drain Current
Operating Junction and Storage Temperature
t
p
= 10 s
I
DM
T
J
,
T
STG
I
S
T
L
1.5
55 to
150
A
°
C
Source Current (Body Diode)
350
mA
Lead Temperature for Soldering Purposes
(1/8
″
from case for 10 s)
260
°
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
Junction
to
Ambient – Steady State
(Note 1)
R
JA
500
°
C/W
Junction
to
Ambient – t
5 s (Note 1)
447
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu. area = 1.127 in sq [1 oz] including traces).
SOT
563
6
CASE 463A
TV
M
MARKING
DIAGRAM
http://onsemi.com
V
(BR)DSS
R
DS(on)
Typ
400 m @ 4.5 V
500 m @ 2.5 V
I
D
Max
(Note 1)
20
540 mA
700 m @ 1.8 V
1
6
TV M
Top View
D
1
G
2
S
2
S
1
G
1
6
5
4
1
2
3
D
2
PINOUT: SOT
563
D1
S1
G1
D2
S2
G2
N
Channel
MOSFET
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
= Specific Device Code
= Date Code
= Pb
Free Package
(Note: Microdot may be in either location)
相關(guān)PDF資料 |
PDF描述 |
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| NTZD3155C | Small Signal MOSFET Complementary 20V, 540mA/430mA, with ESD protection, SOT563 package.(20V，540mA/430mA雙功率MOSFET帶ESD保護) |
| NTZS3151P | Small Signal MOSFET 20V, 950mA, P Channel SOT563(20V，950mA雙功率MOSFET帶ESD保護) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTZD3154NT1G | 功能描述:MOSFET 20V 540mA Dual N-Channel w/ESD RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTZD3154NT1H | 制造商:ON Semiconductor 功能描述:NFET SOT563 20V 540MA TR - Tape and Reel |
| NTZD3154NT2G | 功能描述:MOSFET NFET 540MA 20V TR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTZD3154NT5G | 功能描述:MOSFET 20V 540mA Dual N-Channel w/ESD RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTZD3155C | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Small Signal MOSFET Complementary 20 V, 540 mA / -430 mA, with ESD protection, SOT-563 package. |
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