- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363714 > NTZS3151P (ON SEMICONDUCTOR) Small Signal MOSFET 20V, 950mA, P Channel SOT563(20V，950mA雙功率MOSFET帶ESD保護(hù)) PDF資料下載
參數(shù)資料
| 型號(hào)： | NTZS3151P |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Small Signal MOSFET 20V, 950mA, P Channel SOT563(20V，950mA雙功率MOSFET帶ESD保護(hù)) |
| 中文描述： | 小信號(hào)MOSFET 20V的，九五零毫安，P通道SOT563封裝（20V的，九五零毫安雙功率MOSFET的帶靜電放電保護(hù)） |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 130K |
| 代理商： | NTZS3151P |
Semiconductor Components Industries, LLC, 2006
March, 2006
Rev. 2
1
Publication Order Number:
NTZS3151P/D
NTZS3151P
Small Signal MOSFET
20 V,
950 mA, P
Channel SOT
563
Features
Low R
DS(on)
Improving System Efficiency
Low Threshold Voltage
Small Footprint 1.6 x 1.6 mm
These are Pb
Free Devices
Applications
Load/Power Switches
Battery Management
Cell Phones, Digital Cameras, PDAs, Pagers, etc.
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted.)
Parameter
Symbol
Value
Unit
Drain
to
Source Voltage
V
DSS
V
GS
20
V
Gate
to
Source Voltage
±
8.0
V
Continuous Drain Current
(Note 1)
Steady
State
T
A
= 25
°
C
T
A
= 70
°
C
I
D
860
mA
690
Power Dissipation
(Note 1)
Steady State
P
D
170
mW
Continuous Drain Current
(Note 1)
t
5 s
T
A
= 25
°
C
T
A
= 70
°
C
5 s
I
D
950
mA
760
Power Dissipation
(Note 1)
t
P
D
210
mW
Pulsed Drain Current
t
p
= 10 s
I
DM
T
J
,
T
STG
I
S
T
L
4.0
A
Operating Junction and Storage Temperature
55 to
150
°
C
Source Current (Body Diode)
360
mA
Lead Temperature for Soldering Purposes
(1/8
″
from case for 10 s)
260
°
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
Junction
to
Ambient – Steady State (Note 1)
R
JA
R
JA
720
°
C/W
Junction
to
Ambient – t
5 s (Note 1)
600
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface
mounted on FR4 board using 1 in. sq. pad size
(Cu. area = 1.127 in. sq. [1 oz.] including traces).
SOT
563
6
CASE 463A
MARKING
DIAGRAM
http://onsemi.com
V
(BR)DSS
R
DS(on)
Typ
120 m @
4.5 V
144 m @
2.5 V
I
D
Max
20 V
950 mA
195 m @
1.8 V
1
6
TX
M
= Specific Device Code
= Date Code
= Pb
Free Package
TX M
Top View
D
D
S
D
D
6
5
4
1
2
3
G
PINOUT: SOT
563
D
S
G
P
Channel MOSFET
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
(Note: Microdot may be in either location)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NUD3105D | Integrated Relay, Inductive Load Driver |
| NUD3105DD | Integrated Relay, Inductive Load Driver |
| NUD3105DMT1 | Integrated Relay, Inductive Load Driver |
| NUD3105 | Integrated Relay, Inductive Load Driver |
| NUD3105LT1 | Integrated Relay, Inductive Load Driver |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTZS3151PT1G | 功能描述:MOSFET -20V -950mA P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTZS3151PT1H | 制造商:ON Semiconductor 功能描述:PFET SOT563 20V 950MA 150 - Tape and Reel 制造商:ON Semiconductor 功能描述:PFET SOT563 20V 950MA TR 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述:REEL / PFET SOT563 20V 950MA TR |
| NTZS3151PT5G | 功能描述:MOSFET -20V -950mA P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NU1000 | 制造商:Behringer 功能描述:Inuke 500W Rms X 2Ch Rack Mount Digital Amplifier |
| NU1000DSP | 制造商:Behringer 功能描述:1000W iNUKE Class D Digital PA Amplifier with DSP Control 制造商:BEHRINGER 功能描述:RACK MOUNT DIGITAL AMPLIFIER INUKE DSP 500W RMS X 2CH |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。