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參數(shù)資料
| 型號： | NTZD3152P |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Small Signal MOSFET 20V, 430mA, Dual P Channel with ESD Protection, SOT563(20V，430mA雙功率MOSFET) |
| 中文描述： | 小信號MOSFET 20V的，四百三十毫安，雙P通道帶ESD保護(hù)，SOT563封裝（20V的，四百三十毫安雙功率MOSFET的） |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 131K |
| 代理商： | NTZD3152P |
Semiconductor Components Industries, LLC, 2006
March, 2006
Rev. 1
1
Publication Order Number:
NTZD3152P/D
NTZD3152P
Small Signal MOSFET
20 V,
430 mA, Dual P
Channel
with ESD Protection, SOT
563
Features
Low R
DS(on)
Improving System Efficiency
Low Threshold Voltage
ESD Protected Gate
Small Footprint 1.6 x 1.6 mm
These are Pb
Free Devices
Applications
Load/Power Switches
Power Supply Converter Circuits
Battery Management
Cell Phones, Digital Cameras, PDAs, Pagers, etc.
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted.)
Parameter
Symbol
Value
Unit
Drain
to
Source Voltage
V
DSS
V
GS
20
V
Gate
to
Source Voltage
±
6.0
V
Continuous Drain Current
(Note 1)
Steady
State
T
A
= 25
°
C
I
D
430
mA
T
A
= 85
°
C
310
Power Dissipation
(Note 1)
Steady State
P
D
250
mW
Continuous Drain Current
(Note 1)
t
5 s
T
A
= 25
°
C
T
A
= 85
°
C
5 s
I
D
455
mA
328
Power Dissipation
(Note 1)
t
P
D
280
mW
Pulsed Drain Current
Operating Junction and Storage Temperature
t
p
= 10 s
I
DM
T
J
,
T
STG
I
S
T
L
750
55 to
150
mA
°
C
Source Current (Body Diode)
350
mA
Lead Temperature for Soldering Purposes
(1/8
″
from case for 10 s)
260
°
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
Junction
to
Ambient – Steady State (Note 1)
R
JA
500
°
C/W
Junction
to
Ambient – t
5 s (Note 1)
447
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in. sq. pad size
(Cu. area = 1.127 in. sq. [1 oz.] including traces).
http://onsemi.com
V
(BR)DSS
R
DS(on)
Typ
0.5 @
4.5 V
0.6 @
2.5 V
I
D
Max
20 V
430 mA
1.0 @
1.8 V
Device
Package
SOT
563
(Pb
Free)
SOT
563
(Pb
Free)
Shipping
ORDERING INFORMATION
NTZD3152PT1G
4000 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Top View
D
1
G
2
S
2
S
1
G
1
6
5
4
1
2
3
D
2
PINOUT: SOT
563
P
Channel
MOSFET
NTZD3152PT5G
8000 / Tape & Reel
D
1
S
1
G
1
D
2
S
2
G
2
TU
M
= Specific Device Code
= Date Code
= Pb
Free Package
TU M
1
MARKING
DIAGRAM
1
6
SOT
563
6
CASE 463A
(Note: Microdot may be in either location)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTZD3152PT1G | 功能描述:MOSFET -20V -430mA Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTZD3152PT1H | 制造商:ON Semiconductor 功能描述:PFET SOT563 20V 430MA 900 - Tape and Reel 制造商:ON Semiconductor 功能描述:PFET SOT563 20V 430MA TR 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述:REEL / PFET SOT563 20V 430MA TR |
| NTZD3152PT5G | 功能描述:MOSFET -20V -430mA Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTZD3152PT5H | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Small Signal MOSFET −20 V, −430 mA, Dual P−Channel with ESD Protection, SOT−563 |
| NTZD3154N | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Small Signal MOSFET 20 V, 540 mA, Dual N−Channel |
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