參數(shù)資料
型號(hào)： NTTS2P03R2
廠商： ON SEMICONDUCTOR
元件分類： 小信號(hào)晶體管
英文描述： Power MOSFET -2.48 Amps, -30 Volts P-Channel Enhancement Mode(-2.48A,-30V,P溝道增強(qiáng)型MOS場效應(yīng)管(D2PAK封裝）)
中文描述： 2100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： MINIATURE, CASE 846A-02, MICRO-8
文件頁數(shù)： 1/8頁
文件大?。?/td> 89K
代理商： NTTS2P03R2
Semiconductor Components Industries, LLC, 2001
February, 2001 – Rev. 0
1
Publication Order Number:
NTTS2P03R2/D
NTTS2P03R2
Product Preview
Power MOSFET
-2.48 Amps, -30 Volts
P–Channel Enhancement Mode
Single Micro8 Package
Features
Ultra Low R
DS(on)
Higher Efficiency Extending Battery Life
Miniature Micro8 Surface Mount Package
Diode Exhibits High Speed, Soft Recovery
Micro8 Mounting Information Provided
Applications
Power Management in Portable and Battery–Powered Products, i.e.:
Cellular and Cordless Telephones and PCMCIA Cards
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
Gate–to–Source Voltage – Continuous
Thermal Resistance –
Junction–to–Ambient (Note 1.)
Total Power Dissipation @ T
A
= 25
°
C
Continuous Drain Current @ T
A
= 25
°
C
Continuous Drain Current @ T
A
= 70
°
C
Thermal Resistance –
Junction–to–Ambient (Note 2.)
Total Power Dissipation @ T
A
= 25
°
C
Continuous Drain Current @ T
A
= 25
°
C
Continuous Drain Current @ T
A
= 70
°
C
Thermal Resistance –
Junction–to–Ambient (Note 3.)
Total Power Dissipation @ T
A
= 25
°
C
Continuous Drain Current @ T
A
= 25
°
C
Continuous Drain Current @ T
A
= 70
°
C
Pulsed Drain Current (Note 5.)
Thermal Resistance –
Junction–to–Ambient (Note 4.)
Total Power Dissipation @ T
A
= 25
°
C
Continuous Drain Current @ T
A
= 25
°
C
Continuous Drain Current @ T
A
= 70
°
C
Pulsed Drain Current (Note 5.)
V
DSS
V
GS
–30
20
V
V
R
θ
JA
P
D
I
D
I
D
160
0.78
–2.48
–1.98
°
C/W
W
A
A
R
θ
JA
P
D
I
D
I
D
70
1.78
–3.75
–3.0
°
C/W
W
A
A
R
θ
JA
P
D
I
D
I
D
I
DM
210
0.60
–2.10
–1.67
–17
°
C/W
W
A
A
A
R
θ
JA
P
D
I
D
I
D
I
DM
T
J
, T
stg
100
1.25
–3.02
–2.42
–24
°
C/W
W
A
A
A
°
C
Operating and Storage
Temperature Range
–55 to
+150
1. Minimum FR–4 or G–10 PCB, Time
≤
10 Seconds.
2. Mounted onto a 2
″
square FR–4 Board (1
″
sq. 2 oz Cu 0.06
″
thick single
sided), Time
≤
10 Seconds.
3. Minimum FR–4 or G–10 PCB, Steady State.
4. Mounted onto a 2
″
square FR–4 Board (1
″
sq. 2 oz Cu 0.06
″
thick single
sided), Steady State.
5. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
Drain
Drain
Drain
Drain
(Top View)
8
7
6
5
Source
Source
Source
Gate
1
2
3
4
Device
Package
Shipping
ORDERING INFORMATION
NTTS2P03R2
Micro8
4000/Tape & Reel
Micro8
CASE 846A
STYLE 1
http://onsemi.com
Single P–Channel
D
S
G
MARKING DIAGRAM
& PIN ASSIGNMENT
1
8
YWW
AE
Y
WW = Work Week
AE
= Device Code
= Year
–2.48 AMPERES
–30 VOLTS
85 m @ V
GS
= –10 V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTTS2P03R2/D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power MOSFET -2.48 Amps， -30 Volts
NTTS2P03R2_05 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET -2.48 Amps, -30 Volts
NTTS2P03R2G 功能描述:MOSFET -30V -2.48A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTUD01N02/D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power MOSFET 100 mAmps， 20 Volts
NTUD3127C 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Small Signal MOSFET 20 V, 200 mA / −180 mA, Complementary, 1.0 x 1.0 mm SOT−963 Package
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