- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363714 > NTTS2P02R2 (ON SEMICONDUCTOR) Power MOSFET -2.4 Amps, -20 Volts Single P–Channel( -2.4 A, -20 V單P通道的功率MOSFET) PDF資料下載
參數(shù)資料
| 型號(hào)： | NTTS2P02R2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Power MOSFET -2.4 Amps, -20 Volts Single P–Channel( -2.4 A, -20 V單P通道的功率MOSFET) |
| 中文描述： | 2400 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MINIATURE, CASE 846A-02, MICRO-8 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 82K |
| 代理商： | NTTS2P02R2 |
Semiconductor Components Industries, LLC, 2000
December, 2000 – Rev. 4
1
Publication Order Number:
NTTS2P02R2/D
NTTS2P02R2
Power MOSFET
-2.4 Amps, -20 Volts
Single P–Channel Micro8
Features
Ultra Low RDS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Miniature Micro–8 Surface Mount Package
Diode Exhibits High Speed, Soft Recovery
Micro8 Mounting Information Provided
Applications
Power Management in Portable and Battery–Powered Products, i.e.:
Cellular and Cordless Telephones and PCMCIA Cards
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
Gate–to–Source Voltage – Continuous
Thermal Resistance –
Junction–to–Ambient (Note 1.)
Total Power Dissipation @ TA = 25
°
C
Continuous Drain Current @ TA = 25
°
C
Continuous Drain Current @ TA = 70
°
C
Pulsed Drain Current (Note 3.)
Thermal Resistance –
Junction–to–Ambient (Note 2.)
Total Power Dissipation @ TA = 25
°
C
Continuous Drain Current @ TA = 25
°
C
Continuous Drain Current @ TA = 70
°
C
Pulsed Drain Current (Note 3.)
Operating and Storage
Temperature Range
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25
°
C
(VDD = –20 Vdc, VGS = –4.5 Vdc,
Peak IL = –5.0 Apk, L = 28 mH,
RG = 25
)
Maximum Lead Temperature for Soldering
Purposes for 10 seconds
1. Minimum FR–4 or G–10 PCB, Steady State.
2. Mounted onto a 2
″
square FR–4 Board (1
″
sq. 2 oz Cu 0.06
″
thick single
sided), Steady State.
3. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2%.
VDSS
VGS
–20
±
8.0
V
V
R
θ
JA
PD
ID
ID
IDM
160
0.78
–2.4
–1.92
–20
°
C/W
W
A
A
A
R
θ
JA
PD
ID
ID
IDM
TJ, Tstg
88
1.42
–3.25
–2.6
–30
–55 to
+150
350
°
C/W
W
A
A
A
°
C
EAS
mJ
TL
260
°
C
Micro8
CASE 846A
STYLE 1
AD
MARKING
DIAGRAM
YWW
D
S
G
1
8
Device
Package
Shipping
ORDERING INFORMATION
NTTS2P02R2
Micro8
4000/Tape & Reel
http://onsemi.com
–2.4 AMPERES
–20 VOLTS
RDS(on) = 90 m
Single P–Channel
Y
WW
AD
= Year
= Work Week
= Device Code
Source
Source
Source
Gate
1
2
3
4
8
7
6
5
Top View
Drain
Drain
Drain
Drain
PIN ASSIGNMENT
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NTTS2P03R2 | Power MOSFET -2.48 Amps, -30 Volts P-Channel Enhancement Mode(-2.48A,-30V,P溝道增強(qiáng)型MOS場效應(yīng)管(D2PAK封裝）) |
| NTUD01N02 | Power MOSFET 100 mAmps, 20 Volts Dual N-Channel(100mA,20V,雙N溝道增強(qiáng)型MOS場效應(yīng)管(SC-88/SOT-363 封裝）) |
| NTV | 3kVDC Isolated 1W Dual Output SM DC-DC Converters |
| NTV0515M | 3kVDC Isolated 1W Dual Output SM DC-DC Converters |
| NTY100N10 | Power MOSFET 123A, 100V N Channel Enhancement Mode TO264 Package(123A，100V雙功率MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTTS2P02R2/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power MOSFET -2.4 Amps， -20 Volts |
| NTTS2P02R2_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET -2.4 Amps, -20 Volts |
| NTTS2P02R2G | 功能描述:MOSFET 20V 2.4A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTTS2P03R2 | 功能描述:MOSFET -30V -2.48A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTTS2P03R2/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power MOSFET -2.48 Amps， -30 Volts |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。