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參數(shù)資料
| 型號(hào)： | NTP85N03 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 85 Amps, 28 Volts N-Channel TO-220(85A,28V,N通道,TO-220封裝的功率MOSFET) |
| 中文描述： | 15 A, 60 V, 0.0068 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大小： | 80K |
| 代理商： | NTP85N03 |
Semiconductor Components Industries, LLC, 2003
October, 2003 Rev. 1
1
Publication Order Number:
NTP85N03/D
NTP85N03, NTB85N03
Power MOSFET
85 Amps, 28 Volts
NChannel TO220 and D
2
PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous
Drain Current
Continuous @ T
C
= 25
°
C
Single Pulse (t
p
= 10 s)
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
Operating and Storage Temperature Range
V
DSS
28
Vdc
Vdc
V
GS
20
I
D
I
DM
P
D
85*
190
80
0.66
55
to
+150
733
Adc
Apk
W
W/
°
C
°
C
T
J
, T
stg
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
DD
= 28 Vdc, V
GS
= 10 Vdc, L = 5.0 mH,
I
L(pk)
= 17 A, RG = 25 )
E
AS
mJ
Thermal Resistance
JunctiontoCase
JunctiontoAmbient (Note 1)
R
JC
R
JA
1.55
70
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
1. When surface mounted to an FR4 board using 1
″
pad size,
(Cu Area 1.127 in
2
).
*Chip current capability limited by package.
T
L
260
°
C
NTx85N03
LLYWW
NTx85N03
LLYWW
85 AMPERES
28 VOLTS
R
DS(on)
= 6.1 m (Typ.)
Device
Package
Shipping
ORDERING INFORMATION
NTP85N03
TO220AB
50 Units/Rail
TO220AB
CASE 221A
Style 5
12
3
4
NChannel
D
S
G
MARKING DIAGRAMS
& PIN ASSIGNMENTS
NTx85N03
x
LL
Y
WW
= Device Code
= P or B
= Location Code
= Year
= Work Week
1
Gate
3
Source
4
Drain
2
Drain
1
Gate
3
Source
4
Drain
2
Drain
1
2
3
D
2
PAK
CASE 418AA
Style 2
4
NTB85N03
D
2
PAK
50 Units/Rail
NTB85N03T4
D
2
PAK
800/Tape & Reel
http://onsemi.com
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTP85N03G | 功能描述:MOSFET 28V 85A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTP85N03RG | 功能描述:MOSFET N-CH 28V 85A TO220AB RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| NTP85N08/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:80 V Power MOSFET |
| NTP8N50/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power MOSFET 8 Amps， 500 Volts |
| NTP90N02 | 功能描述:MOSFET 24V 90A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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