參數(shù)資料
型號(hào)： NTGD3133P
廠商： ON SEMICONDUCTOR
英文描述： Power MOSFET(功率MOSFET)
中文描述： 功率MOSFET（功率MOSFET的）
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 67K
代理商： NTGD3133P
NTGD3133P
http://onsemi.com
2
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
JunctiontoAmbient – Steady State (Note 3)
R
JA
115
°
C/W
JunctiontoAmbient – t
≤
5 s (Note 3)
R
JA
95
JunctiontoAmbient – Steady State Min Pad (Note 4)
R
JA
225
3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface Mounted on FR4 Board using the minimum recommended pad size.
MOSFET ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V
I
D
= 250 A
20
V
DraintoSource Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
14.4
mV/
°
C
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V, V
DS
= 16 V
T
J
= 25
°
C
1.0
A
T
J
= 85
°
C
10
GatetoSource Leakage Current
I
GSS
V
DS
= 0 V, V
GS
=
±
12 V
100
nA
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
I
D
= 250 A
0.6
0.9
1.4
V
DraintoSource On Resistance
R
DS(on)
V
GS
= 4.5 V, I
D
= 1.9 A
95
145
m
V
GS
= 2.5 V, I
D
= 1.6 A
150
200
Forward Transconductance
g
FS
V
DS
= 5.0 V, I
D
= 2.5 A
4.0
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
ISS
V
GS
= 0 V, V
DS
= 10 V, f = 1.0 MHz
390
pF
Output Capacitance
C
OSS
75
Reverse Transfer Capacitance
C
RSS
37
Total Gate Charge
Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 10 V, I
D
= 2.2 A
3.7
5.5
nC
Threshold Gate Charge
Q
G(TH)
0.7
GatetoSource Charge
Q
GS
1.1
GatetoDrain Charge
Q
GD
1.2
SWITCHING CHARACTERISTICS
(Note 6)
TurnOn Delay Time
t
d(ON)
V
GS
= 4.5 V, V
DD
= 10 V,
D
= 1.0 A, R
G
= 6.0
6.7
ns
Rise Time
t
r
12.7
TurnOff Delay Time
t
d(OFF)
13.2
Fall Time
t
f
11
DRAINSOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V, T
J
= 25
°
C
I
S
= 0.8 A
0.8
1.2
V
Reverse Recovery Time
t
RR
V
GS
= 0 V,
dI
SD
/ dt = 100 A/ s, I
S
= 1.0 A
7.4
ns
Charge Time
t
a
4.8
Discharge Time
t
b
2.6
Reverse Recovery Charge
Q
RR
2.4
nC
5. Pulse Test: pulse width
6. Switching characteristics are independent of operating junction temperatures.
300 s, duty cycle
2%.
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