參數(shù)資料
型號： NTE466
廠商： NTE Electronics, Inc.
英文描述： Silicon N-Channel JFET Transistor Chopper, High Speed Switch
中文描述： 硅N溝道場效應(yīng)晶體管斬波器，高速開關(guān)
文件頁數(shù)： 1/2頁
文件大?。?/td> 21K
代理商： NTE466
NTE466
Silicon N–Channel JFET Transistor
Chopper, High Speed Switch
Absolute Maximum Ratings:
Drain–Source Voltage, V
DS
Drain–Gate Voltage, V
DG
Reverse Gate–Source Voltage, V
GSR
Forward Gate Current, I
G(f)
Total Device Dissipation (T
A
= +25
°
C), P
D
Derate Above 25
°
C
Storage Temperature Range, T
stg
40V
40V
–40V
50mA
360mW
2.4mW/
°
C
–65
°
to +175
°
C
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Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Gate–Source Breakdown Voltage
V
(BR)GSS
I
G
= 1A, V
DS
= 0
I
GSS
V
GS
= –20V, V
DS
= 0
V
GS
= –20V, V
DS
= 0, T
A
= +150
°
C
V
GS(off)
V
DS
= 15V, I
D
= 0.5nA
I
D(off)
V
DS
= 15V, V
GS
= –10V
V
DS
= 15V, V
GS
= –10V, T
A
= +150
°
C
–40
–
–
V
Gate Reverse Current
–
–
0.25
nA
μ
A
V
–
–
0.5
Gate–Source Cutoff Voltage
–4
–
–10
Drain Cutoff Current
–
–
0.25
nA
μ
A
–
–
0.5
ON Characteristics
Zero–Gate–Voltage Drain Current
I
DSS
V
DS(on)
V
DS
= 15V, V
GS
= 0, Note 1
I
D
= 20mA, V
GS
= 0
50
–
–
mA
Drain–Source ON–Voltage
–
–
0.75
V
Small–Signal Characteristics
Drain–Source “ON” Resistance
r
DS(on)
C
iss
C
rss
V
GS
= 0, I
D
= 0, f = 1kHz
V
DS
= 0, V
GS
= –10V, f = 1MHz
V
DS
= 0, V
GS
= –10V, f = 1MHz
–
–
25
pF
Input Capacitance
–
–
18
Reverse Transfer Capacitance
–
–
0.8
pF
Switching Characteristics
(Note 2)
Turn–On Delay Time
t
d(on)
t
r
t
off
V
DD
= 10V, I
D(on)
= 20mA,
V
GS(on)
= 0, V
GS(off)
= –10V
–
–
6
ns
Rise Time
–
–
3
ns
Turn–Off Time
–
–
25
ns
Note 1. Pulse Test: Pulse Width = 100ms, Duty Cycle
≤
10%.
Note 2. The I
D(on)
values are nominal; exact values vary slightly with transistor parameters.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTE467 制造商:NTE Electronics 功能描述:JFET-N-CH CHOPPER/FAST SW 制造商:NTE Electronics 功能描述:TO-92 JFET HISPD SW 制造商:NTE Electronics 功能描述:N CHANNEL JFET, -30V, TO-92; Transistor Type:JFET; Breakdown Voltage Vbr:-30V; Zero Gate Voltage Drain Current Idss Min:50mA; Gate-Source Cutoff Voltage Vgs(off) Max:-10V; Power Dissipation Pd:310mW; Operating Temperature Min:-65C 制造商:NTE Electronics 功能描述:Trans JFET N-CH 30V 3-Pin TO-92
NTE468 制造商:NTE Electronics 功能描述:JFET-N-CHANNEL SWITCH 制造商:NTE Electronics 功能描述:TO-92 N-CH 35V 1nA 制造商:NTE Electronics 功能描述:N CHANNEL JFET, -35V, TO-92; Transistor Type:JFET; Breakdown Voltage Vbr:35V; Zero Gate Voltage Drain Current Idss Min:20mA; Gate-Source Cutoff Voltage Vgs(off) Max:-10V; Power Dissipation Pd:625mW; Operating Temperature Min:-55C ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans JFET N-CH 35V 3-Pin TO-92
NTE469 制造商:NTE Electronics 功能描述:JFET-N-CHANNEL SWITCH 制造商:NTE Electronics 功能描述:Trans JFET N-CH 35V 3-Pin TO-92
NTE47 制造商:NTE Electronics 功能描述:T-NPN-SI LO NOISE AMP 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 45V 0.2A 3-Pin TO-92
NTE470 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 20V 20A 4-Pin Case W-52
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