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參數(shù)資料
| 型號： | NTE464 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon Complementary MOSFET Transistors Enhancement Mode for Switching Applications |
| 中文描述： | 硅增強互補MOSFET晶體管的開關(guān)應(yīng)用模式 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 23K |
| 代理商： | NTE464 |
NTE464 (P–Ch) & NTE465 (N–Ch)
Silicon Complementary MOSFET Transistors
Enhancement Mode for Switching Applications
Absolute Maximum Ratings:
Drain–Source Voltage, V
DS
Drain–Gate Voltage, V
DG
Gate–Source Voltage, V
GS
Gate Current, I
G
Total Device Dissipation (T
A
= +25
°
C), P
D
Derate Above 25
°
C
Total Device Dissipation (T
C
= +25
°
C), P
D
Derate Above 25
°
C
Operating Junction Temperature, T
J
Storage Temperature Range, T
stg
25V
30V
±
30V
30mA
300mW
1.7mW/
°
C
800mW
4.56mW/
°
C
+175
°
C
–55
°
to +175
°
C
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Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Drain–Source Breakdown Voltage
V
(BR)DSX
I
D
= –10
μ
A, V
GS
= 0
I
DSS
V
DS
= –10V, V
GS
= 0, T
A
= +25
°
C
V
DS
= –10V, V
GS
= 0, T
A
= +150
°
C
I
GSS
V
GS
=
±
30V, V
DS
= 0
–25
–
–
V
Zero–Gate–Voltage Drain Current
–
–
–10
nA
μ
A
pA
–
–
–10
±
10
Gate Reverse Current
–
–
ON Characteristics
Gate Threshold Voltage
V
GS(Th)
V
DS(on)
I
D(on)
V
DS
= –10V, I
D
= –10
μ
A
I
D
= –2mA, V
GS
= –10V
V
GS
= –10V, V
DS
= –10V
–1
–
–5
V
Drain–Source On–Voltage
–
–
–1
V
On–State Drain Current
–3
–
–
mA
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