參數(shù)資料
型號： NTE460
廠商： NTE Electronics, Inc.
英文描述： Silicon P-Channel JFET Transistor AF Amp
中文描述： 硅P溝道場效應(yīng)晶體管放大器自動對焦
文件頁數(shù)： 1/2頁
文件大?。?/td> 21K
代理商： NTE460
NTE460
Silicon P–Channel JFET Transistor
AF Amp
Absolute Maximum Ratings:
Drain–Gate Voltage, V
DG
Reverse Gate–Source Voltage, V
GSR
Gate Current, I
G
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
A
= +25
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20V
20V
10mA
0.3W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.7mW/
°
C
–65
°
to +200
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Gate–Source Breakdown Voltage
V
(BR)GSS
I
G
= 10
μ
A, V
DS
= 0
I
GSS
V
GS
= 10V, V
DS
= 0
V
GS
= 10V, V
DS
= 0, T
A
= +150
°
C
20
–
–
V
Gate Reverse Current
–
–
10
nA
μ
A
–
–
10
ON Characteristics
Zero–Gate–Voltage Drain Current
I
DSS
V
GS
r
DS
V
DS
= –10V, V
GS
= 0, Note 1
V
DG
= –15V, I
D
= 10
μ
A
I
D
= 100
μ
A, V
GS
= 0
2.0
–
6.0
mA
Gate–Source Voltage
–
–
6.0
V
Drain–Source Resistance
–
–
800
Small–Signal Characteristics
Forward Transfer Admittance
|y
fs
|
V
DS
= 10V, I
D
= 2mA, f = 1kHz, Note 1
V
DS
= 10V, I
D
= 2mA, f = 10MHz, Note 1
V
DS
= 10V, I
D
= 2mA, f = 1kHz
V
DS
= 10V, I
D
= 2mA, f = 1kHz
V
DS
= 10V, I
D
= 2mA, f = 1kHz
V
DS
= 10V, V
GS
= 1V, f = 1MHz
1500
–
3000
μ
mhos
μ
mhos
μ
mhos
μ
mhos
μ
mhos
pF
1350
–
–
Output Admittance
|y
os
|
|y
rs
|
|y
is
|
C
iss
–
–
40
Reverse Transfer Conductance
–
–
0.1
Input Conductance
–
–
0.2
Inpu Capacitance
–
–
20
Functional Characteristics
Noise Figure
NF
V
DS
= –5V, I
D
= 1mA, R
g
= 1M
, f = 1kHz
–
–
3.0
dB
Note 1. Pulse Test: PulseWidth
≤
630ms, Duty Cycle
≤
10%.
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參數(shù)描述
NTE461 制造商:NTE Electronics 功能描述:JFET-MATCHED DUAL- N-CH 制造商:NTE Electronics 功能描述:TRANSISTOR,JFET,N-Channel, Dual,500uA I(DSS),TO-71 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans JFET N-CH 6-Pin TO-71
NTE462 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 20MA I(D) | TO-18
NTE464 制造商:NTE Electronics 功能描述:Trans MOSFET P-CH 25V 3-Pin TO-72
NTE465 制造商:NTE Electronics 功能描述:MOSFET-N CHANNEL GEN PURP 制造商:NTE Electronics 功能描述:N CHANNEL MOSFET, 25V, 3mA, TO-72; Transistor Polarity:N Channel; Continuous Drain Current Id:3mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):300ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-5V ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans MOSFET N-CH 25V 4-Pin TO-72
NTE466 制造商:NTE Electronics 功能描述:JFET-N-CH CHOPPER/SW 制造商:NTE Electronics 功能描述:Bulk 制造商:NTE Electronics 功能描述:JFET N CH -40V TO-18 制造商:NTE Electronics 功能描述:JFET, N CH, -40V, TO-18 制造商:NTE Electronics 功能描述:JFET, N CH, -40V, TO-18; Transistor Type:JFET; Breakdown Voltage Vbr:-40V; Zero Gate Voltage Drain Current Idss Min:50mA; Gate-Source Cutoff Voltage Vgs(off) Max:-10V; Power Dissipation Pd:360mW; No. of Pins:3; Current Rating:50mA ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans JFET N-CH 40V 3-Pin TO-18
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