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參數(shù)資料
| 型號(hào)： | NTE456 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | N-Channel Silicon JFET General Purpose Amp, Switch |
| 中文描述： | N溝道場(chǎng)效應(yīng)硅通用放大器，開關(guān) |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 22K |
| 代理商： | NTE456 |
NTE456
N–Channel Silicon JFET
General Purpose Amp, Switch
Description:
The NTE456 is an N–Channel junction silicon field–effect transistor in a TO72 type package designed
for general purpose amplifier and switching applications.
Absolute Maximum Ratings:
Drain–Source Voltage, V
DS
Drain–Gate Voltge, V
DG
Gate–Source Voltage, V
GS
Drain Current, I
D
Total Device Dissipation (T
A
= +25
°
C), P
D
Derate Above 25
°
C
Operating Junction Temperature, T
J
Storage Temperature Range, T
stg
30V
30V
–30V
15mA
300mW
2mW/
°
C
+150
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65
°
C to +200
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Gate–Source Breakdown Voltage
V
(BR)GSS
V
DS
= 0, I
G
= –10
μ
A
I
GSS
V
GS
= –15V, V
DS
= 0
V
GS
= –15V, V
DS
= 0, T
A
= +150
°
C
V
GS(off)
V
DS
= 15V, I
D
= 0.1nA
V
GS
V
DS
= 15V, I
D
= 200
μ
A
–30
–
–
V
Gate Reverse Current
–
–
–0.1
nA
–
–
–100
nA
Gate–Source Cutoff Voltage
–
–
–6
V
Gate–Source Voltage
–1.0
–
–5.0
V
ON Characteristics
Zero–Gate–Voltage Drain Current
I
DSS
r
DS(on)
V
DS
= 15V, V
GS
= 0
V
DS
= 0, V
GS
= 0
2.0
–
6.0
mA
Static Drain–Source On Resistance
–
400
–
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