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參數(shù)資料
| 型號(hào)： | NTE452 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon N-Channel JFET Transistor VHF Amplifier, Mixer |
| 中文描述： | 硅N溝道場(chǎng)效應(yīng)晶體管高頻放大器，混頻器 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 24K |
| 代理商： | NTE452 |
NTE452
Silicon N–Channel JFET Transistor
VHF Amplifier, Mixer
Description:
The NTE452 is a silicon, N–channel junction field effect tranistor (JFET) in a TO72 type package de-
signed to be used in the depletion mode in VHF/UHF amplifiers.
Absolute Maximum Ratings:
Drain–Source Voltage, V
DS
Drain–Gate Voltage, V
DG
Gate–Source Voltage, V
GS
Gate Current, I
G
Total Device Dissipation (T
A
= +25
°
C), P
D
Derate Above 25
°
C
Operating Junction Temperature Range, T
J
Storage Temperature Range, T
stg
30V
35V
30V
10mA
300mW
1.71mW/
°
C
–65
°
to +175
°
C
–65
°
to +175
°
C
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Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Gate–Source Breakdown Voltage
V
(BR)GSS
I
G
= 1
μ
s, V
DS
= 0
I
GSS
V
GS
= 20V, V
DS
= 0
V
GS
= 20V, V
DS
= 0, T
A
= +150
°
C
V
GS(off)
I
D
= 1nA, V
DS
= 15V
V
GS
I
D
= 0.5mA, V
DS
= 15V
V
GS(f)
I
G
= 1mA, V
DS
= 0
30
–
–
V
Gate Reverse Current
–
–
100
pA
–
–
200
pA
Gate–Source Cutoff Voltage
–
–
6
V
Gate–Source Voltage
1.0
–
5.5
V
Gate–Source Forward Voltage
–
–
1.0
V
ON Characteristics
(Note 1)
Zero–Gate Voltage Drain Current
I
DSS
V
DS
= 15V, V
GS
= 0
5
–
15
mA
Small–Signal Characteristics
Forward Transfer Admittance
|Y
fs
|
Y
fs(real)
V
DS
= 15V, V
GS
= 0, f = 1kHz, Note 1
V
DS
= 15V, V
GS
= 0, f = 400MHz
4500
–
7500
μ
mhos
μ
mhos
Real Part of Forward Transfer
Admittance
4000
–
–
Note 1. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
1%.
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|---|---|
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| NTE4522B | 制造商:NTE Electronics 功能描述:Logic IC 制造商:NTE Electronics 功能描述:IC-CMOS- 4-BIT COUNTER 制造商:NTE Electronics 功能描述:Logic IC ;RoHS Compliant: Yes |
| NTE4526B | 制造商:NTE Electronics 功能描述: |
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