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參數(shù)資料
| 型號： | NTE329 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor RF Power Amp, CB |
| 中文描述： | 硅NPN晶體管射頻功率放大器及CB |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 24K |
| 代理商： | NTE329 |
Electrical Characteristics (Cont’d):
(T
A
= +25
°
C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Functional Test
Common
–
Emitter Amplifier Power Gain
G
PE
η
P
OUT
= 3.5W, V
CC
= 12.5V, f = 27MHz
P
OUT
= 3.5W, V
CC
= 12.5V, f = 27MHz,
Note 3
10
–
–
dB
Collector Efficiency
62.5
70.0
–
%
Percent Up
–
Modulation
–
f = 27MHz, Note 2
–
85
–
%
pF
Parallel Equivalent Input Resistance
R
in
C
in
C
out
P
OUT
= 3.5W, V
CC
= 12.5V, f = 27MHz
P
OUT
= 3.5W, V
CC
= 12.5V, f = 27MHz
P
OUT
= 3.5W, V
CC
= 12.5V, f = 27MHz
–
21
–
Parallel Equivalent Input Capacitance
–
900
–
Parallel Equivalent Output Capaciatnce
–
200
–
pF
Note 2.
η
= R
F
P
OUT
100
(V
CC
) (I
C
)
Note 3. Percentage Up
–
Modulation is measured by setting the Carrier Power (P
C
) to 3.5 Watts with
V
CC
= 12.5Vdc and noting the power input. The peak envelope power (PEP) is noted after
doubling the original power input to simulate driver modulation (at a 25% duty cycle for ther-
mal considerations) and raising the V
CC
to 25Vdc (to simulate the modulating voltage). Per-
centage Up
–
Modulation is then determined by the relation:
Percentage Up
–
Modulation = (PEP) 1/2
–
1
100
P
C
.260
(6.6)
Max
.500
(12.7)
Min
.370 (9.39) Dia Max
.355 (9.03) Dia Max
45
°
.031 (.793)
Emitter
Base
Collector/Case
.018 (0.45)
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