參數(shù)資料
型號： NTE3042
廠商： NTE Electronics, Inc.
英文描述： Optoisolator NPN Transistor Output
中文描述： NPN晶體管輸出光隔離器
文件頁數(shù)： 1/2頁
文件大?。?/td> 21K
代理商： NTE3042
NTE330
Germanium PNP Transistor
High Power Switch
Description:
The NTE330 is a germanium PNP power transistor in a TO36 type package featuring low saturation
voltage capability for high efficiency performance in motor drive controls and low loss regulators.
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CB
Emitter–Base Voltage, V
EB
Continuous Collector Current, I
C
Continuous Base Current, I
B
Total Device Dissipation (T
C
= +25
°
C), P
D
Derate Above 25
°
C
Operating Junction Temperature Range, T
J
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
thJC
40V
50V
30V
25A
4A
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87.5W
1.17W/
°
C
–65
°
to +95
°
C
–65
°
to +95
°
C
0.8
°
C/W
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V
(BR)CEO
V
EBF
I
CBO
I
C
= 1A, I
B
= 0
V
CB
= 50V, I
E
= 0
V
CB
= 2V, I
E
= 0
V
CB
= 50V, I
E
= 0
V
CB
= 50V, I
E
= 0, T
B
= +85
°
C
V
BE
= 30V, I
C
= 0
40
–
–
V
Floating Potential
–
–
1.0
V
μ
A
mA
Collector Cutoff Current
–
–
300
–
–
4.0
–
–
15
mA
Emitter Cutoff Current
I
EBO
–
–
8.0
mA
ON Characteristics
DC Current Gain
h
FE
V
CE
= 4V, I
C
= 15A
V
CE
= 4V, I
C
= 25A
I
C
= 25A, I
B
= 4A
I
C
= 25A, I
B
= 3A
15
–
60
12
–
–
Collector–Emitter Saturation Voltage
V
CE(sat)
V
BE(sat)
–
–
0.7
V
Base–Emitter Saturation Voltage
–
–
1.5
V
Small–Signal Characteristics
Common–Emitter Cutoff Frequency
h
hfe
V
CE
= 6V, I
C
= 5A
–
4.0
–
kHz
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