參數(shù)資料
型號： NTE3312
廠商： NTE Electronics, Inc.
英文描述： Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
中文描述： 絕緣柵雙極晶體管N溝道增強(qiáng)模式，高速開關(guān)
文件頁數(shù)： 1/2頁
文件大?。?/td> 18K
代理商： NTE3312
NTE3312
Insulated Gate Bipolar Transistor
N–Channel Enhancement Mode,
High Speed Switch
Features:
High Input Impedance
High Speed
Low Saturation Voltage
Enhancement Mode
Applications:
High Power Switching
Motor Control
Absolute Maximum Raings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Emitter Voltage, V
CES
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate–Emitter Voltage, V
GES
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
DC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulse (1ms)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation (T
C
= +25
°
C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1200V
±
20V
8A
16A
100W
+150
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
±
500
1.0
Unit
Gate Leakage Current
I
GES
I
CES
V
GE
=
±
20V, V
CE
= 0
V
CE
= 1200V, V
GE
= 0
I
C
= 2mA, V
GE
= 0
I
C
= 8mA, V
CE
= 5V
I
C
= 8A, V
GE
= 15V
V
CE
= 10V, V
GE
= 0, f = 1MHz
V
CC
= 600V
–
–
nA
Collector Cutoff Current
–
–
mA
Collector–Emitter Breakdown Voltage
V
(BR)CES
V
GE(off)
V
CE(sat)
C
ies
t
r
t
on
t
f
t
off
1200
–
–
V
Gate–Emitter Cutoff Voltage
3.0
–
6.0
V
Collector–Emitter Saturation Voltage
–
3.0
4.0
V
Input Capacitance
–
1150
–
pF
μ
s
μ
s
μ
s
μ
s
Rise Time
–
0.30
0.60
Turn–On Time
–
0.40
0.80
Fall Time
–
0.25
0.50
Turn–Off Time
–
0.80
1.50
相關(guān)PDF資料
PDF描述
NTE331 Silicon Complementary Transistors Audio Power Amp, Switch
NTE3320 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
NTE3321 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
NTE3322 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
NTE3323 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTE331MP 制造商:NTE Electronics 功能描述:MATCH PAIR OF NTE331
NTE332 制造商:NTE Electronics 功能描述:TRANSISTOR PNP SILICON 100V IC=15A TO-220 CASE COMP'L TO NTE331 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR PNP -100V TO-220 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, PNP, -100V, TO-220 制造商:NTE Electronics 功能描述:T-PNP-SI-AF PO-REG-SW 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, PNP, -100V, TO-220; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Transition Frequency Typ ft:3MHz; Power Dissipation Pd:90W; DC Collector Current:-15A; DC Current Gain hFE:40; No. of Pins:3 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans GP BJT PNP 100V 15A 3-Pin(3+Tab) TO-220
NTE3320 制造商:NTE Electronics 功能描述:SINGLE IGBT 600V 50A 制造商:NTE Electronics 功能描述:SINGLE IGBT, 600V, 50A 制造商:NTE Electronics 功能描述:TO-247 N-CH 600V 50A 制造商:NTE Electronics 功能描述:SINGLE IGBT, 600V, 50A; Transistor Type:IGBT; DC Collector Current:50A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; No. of Pins:3; Continuous Collector Current Ic:50A ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans IGBT Chip N-CH 600V 50A 3-Pin(3+Tab) TO-3P
NTE3321 制造商:NTE 制造商全稱:NTE Electronics 功能描述:Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
NTE3322 制造商:NTE Electronics 功能描述:IGBT N-CHANNEL ENHANCEMENT 900V IC=60A TO-3P CASE HIGH SPEED SWITCH 制造商:NTE Electronics 功能描述:SINGLE IGBT 900V 60A 制造商:NTE Electronics 功能描述:SINGLE IGBT, 900V, 60A 制造商:NTE Electronics 功能描述:60AMP 制造商:NTE Electronics 功能描述:SINGLE IGBT, 900V, 60A; Transistor Type:IGBT; DC Collector Current:60A; Collector Emitter Voltage Vces:2.1V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:900V; No. of Pins:3; Continuous Collector Current Ic:60A ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans IGBT Chip N-CH 900V 60A 3-Pin
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*