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參數(shù)資料
| 型號： | NTE3323 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
| 中文描述： | 絕緣柵雙極晶體管N溝道增強(qiáng)模式，高速開關(guān) |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 20K |
| 代理商： | NTE3323 |
NTE3323
Insulated Gate Bipolar Transistor
N–Channel Enhancement Mode,
High Speed Switch
Features:
High Input Impedance
High Speed
Low Saturation Voltage
Enhancement Mode
Applications:
High Power Switching
Motor Control
Absolute Maximum Raings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Emitter Voltage, V
CES
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate–Emitter Voltage, V
GES
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
DC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulse (1ms)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation (T
C
= +25
°
C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1200V
±
20V
25A
50A
200W
+150
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
±
500
1.0
Unit
Gate Leakage Current
I
GES
I
CES
V
GE
=
±
20V, V
CE
= 0
V
CE
= 1200V, V
GE
= 0
I
C
= 2mA, V
GE
= 0
I
C
= 25mA, V
CE
= 5V
I
C
= 25A, V
GE
= 15V
V
CE
= 10V, V
GE
= 0, f = 1MHz
V
CC
= 600V
–
–
nA
Collector Cutoff Current
–
–
mA
Collector–Emitter Breakdown Voltage
V
(BR)CES
V
GE(off)
V
CE(sat)
C
ies
t
r
t
on
t
f
t
off
1200
–
–
V
Gate–Emitter Cutoff Voltage
3.0
–
6.0
V
Collector–Emitter Saturation Voltage
–
3.0
4.0
V
Input Capacitance
–
3200
–
pF
μ
s
μ
s
μ
s
μ
s
Rise Time
–
0.30
0.60
Turn–On Time
–
0.40
0.80
Fall Time
–
0.25
0.50
Turn–Off Time
–
0.80
1.50
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