- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363694 > NTE329 (NTE Electronics, Inc.) Silicon NPN Transistor RF Power Amp, CB PDF資料下載
參數(shù)資料
| 型號(hào)： | NTE329 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor RF Power Amp, CB |
| 中文描述： | 硅NPN晶體管射頻功率放大器及CB |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 24K |
| 代理商： | NTE329 |
NTE329
Silicon NPN Transistor
RF Power Amp, CB
Description:
The NTE329 is designed primarily for use in large–signal output amplifier stages. Intended for use
in Citizen–Band communications equipment operating to 30MHz. High breakdown voltages allow a
high percentage of up–modulation in AM circuits.
Features:
Specified 12.5V, 28MHz Characteristic:
Power Output = 3.5W
Power Gain
Efficiency
= 10dB
= 70% Typical
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CBO
Emitter–Base Voltage, V
EBO
Continuous Collector Current, I
C
Total Device Dissipation (T
C
= +25
°
C, Note 1), P
D
Derate above 25
°
C
Storage Temperature Range, T
stg
Note 1. This device is designed for RF operation. The total device dissipation rating applies only
when the device is operated as an RF amplifier.
30V
60V
3V
1A
5W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
28.6mW/
°
C
–65
°
to +200
°
C
Electrical Characteristics:
(T
A
= +25
°
C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CBO
I
C
= 50mA, I
B
= 0
I
C
= 200mA, V
BE
= 0
I
E
= 1mA, I
C
= 0
V
CB
= 15V, I
E
= 0
30
–
–
V
60
–
–
V
Emitter–Base Breakdown Voltage
3
–
–
V
Collector Cutoff Current
–
–
0.01
mA
ON Characteristics
DC Current Gain
h
FE
V
CE
= 2V, I
C
= 400mA
10
–
–
–
Dynamic Characteristics
Output Capacitance
C
ob
V
CB
= 12.5V, I
E
= 0, f = 1MHz
–
35
70
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NTE3300 | Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
| NTE3301 | Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
| NTE3302 | Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
| NTE330 | Germanium PNP Transistor High Power Switch |
| NTE3042 | Optoisolator NPN Transistor Output |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTE330 | 制造商:NTE Electronics 功能描述:TRANSISTOR PNP GERMANIUM 50V IC=25A TO-36 CASE HIGH POWER SWITCH 制造商:NTE Electronics 功能描述:Trans GP BJT PNP 40V 25A 3-Pin TO-36 |
| NTE3300 | 制造商:NTE Electronics 功能描述:Trans IGBT Chip N-CH 400V 10A 3-Pin(3+Tab) TO-220FP |
| NTE3301 | 制造商:NTE 制造商全稱:NTE Electronics 功能描述:Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
| NTE3302 | 制造商:NTE Electronics 功能描述:IGBT-N-CHANNEL ENHANCEMENT 600V IC=8A TO-220 FULL PACK CASE |
| NTE3303 | 制造商:NTE 制造商全稱:NTE Electronics 功能描述:Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。