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參數資料
| 型號： | NTE3301 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
| 中文描述： | 絕緣柵雙極晶體管N溝道增強模式，高速開關 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 19K |
| 代理商： | NTE3301 |
NTE3301
Insulated Gate Bipolar Transistor
N–Channel Enhancement Mode,
High Speed Switch
Features:
High Input Impedance
Low Saturation Voltage
Enhancement Mode
20V Gate Drive
Applications:
High Power Switching
Motor Control
Absolute Maximum Raings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Emitter Voltage, V
CES
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate–Emitter Voltage, V
GES
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
DC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulse (1ms)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
T
A
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, R
thJC
Screw Torque
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
400V
±
25V
15A
170A
2W
40W
+150
°
C
–55
°
to +150
°
C
3.12
°
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.6N
m
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
±
100
1.0
Unit
Gate Leakage Current
I
GES
I
CES
V
GE
=
±
25V, V
CE
= 0
V
CE
= 400V, V
GE
= 0
I
C
= 2mA, V
GE
= 0
I
C
= 1mA, V
CE
= 5V
I
C
= 170A, V
GE
= 20V (Pulsed)
V
CE
= 10V, V
GE
= 0, f = 1MHz
V
CC
= 300V
–
–
nA
μ
A
V
Collector Cutoff Current
–
–
Collector–Emitter Breakdown Voltage
V
(BR)CES
V
GE(off)
V
CE(sat)
C
ies
t
r
t
on
t
f
t
off
400
–
–
Gate–Emitter Cutoff Voltage
4.0
5.0
7.0
V
Collector–Emitter Saturation Voltage
–
5.0
8.0
V
Input Capacitance
–
2000
–
pF
μ
s
μ
s
μ
s
μ
s
Rise Time
–
0.1
0.5
Turn–On Time
–
0.15
0.50
Fall Time
–
4.0
6.0
Turn–Off Time
–
4.5
7.0
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