參數(shù)資料
型號(hào): NTE326
廠商: NTE Electronics, Inc.
英文描述: Silicon P-Channel JFET Transistor General Purpose AF Amplifier
中文描述: 硅P溝道場(chǎng)效應(yīng)晶體管放大器通用自動(dòng)對(duì)焦
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 21K
代理商: NTE326
NTE326
Silicon P–Channel JFET Transistor
General Purpose AF Amplifier
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Drain–Gate Voltage, V
DG
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Gate–Source Voltage, V
GSR
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Gate Current, I
G(f)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
A
= +25
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
40V
40V
10mA
310mW
2.82mW/
°
C
–65
°
to +135
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Gate–Source Breakdown Voltage
V
(BR)GSS
I
G
= 10
μ
A, V
DS
= 0
I
GSS
V
GS
= 20V, V
DS
= 0
V
GS
= 20V, V
DS
= 0, T
A
= +100
°
C
V
GS(off)
I
D
= 1
μ
A, V
DS
= 15V
V
GS
I
D
= 0.2mA, V
DS
= 15V
40
V
Gate Reverse Current
5
nA
μ
A
V
1
Gate–Source Cutoff Voltage
1.0
7.5
Gate–Source Voltage
0.8
4.5
V
ON Characteristics
Zero–Gate–Voltage Drain Current
I
DSS
V
DS
= 15V, V
GS
= 0, f = 1kHz
2
9
mA
Small–Signal Characteristics
Forward Transfer Admittance
|y
fs
|
|y
os
|
C
iss
C
rss
V
DS
= 15V, V
GS
= 0, f = 1kHz
V
DS
= 15V, V
GS
= 0, f = 1kHz
V
DS
= 15V, V
GS
= 0, f = 1MHz
V
DS
= 15V, V
GS
= 0, f = 1MHz
1500
5000
μ
mho
μ
mho
pF
Output Admittance
75
Input Capacitance
5
7
Reverse Transfer Capacitance
1
2
pF
Functional Characteristics
Noise Figure
NF
V
DS
= 15V, V
GS
= 0, R
G
= 1M
,
f = 100Hz, BW = 1Hz
V
DS
= 15V, V
GS
= 0, f = 100Hz,
BW = 1Hz
1.0
2.5
dB
Equivalent Short–Circuit Input Noise
Voltage
e
n
60
115
nV/
Hz
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