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參數(shù)資料
| 型號： | NTE328 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor Power Amp, Switch |
| 中文描述： | 硅NPN晶體管功率放大器，開關(guān) |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 25K |
| 代理商： | NTE328 |
NTE328
Silicon NPN Transistor
Power Amp, Switch
Description:
The NTE328 i a silicon NPN transistor in a TO3 type package designed for use in industrial power
amplifier and switching circuit applications.
Features:
High Collector–Emitter Sustaining Voltage
High DC Current Gain
Low Collector–Emitter Saturation Voltage
Fast Switching Times
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CB
Emitter–Base Voltage, V
EB
Collector Current, I
C
Continuous
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +25
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, R
thJC
120V
140V
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
25A
50A
10A
200W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.14W/
°
C
–65
°
to +200
°
C
–65
°
to +200
°
C
0.875
°
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage
V
CEO(sus)
I
CEX
I
C
= 50mA, I
B
= 0, Note 1
V
CE
= 120V, V
BE(off)
= 1.5V
V
CE
= 120V, V
BE(off)
= 1.5V, T
C
= +150
°
C
V
CE
= 60V, I
B
= 0
V
CB
= 180V, I
E
= 0
V
BE
= 6V, I
C
= 0
120
–
–
V
Collector Cutoff Current
–
–
10
mA
–
–
1.0
mA
μ
A
μ
A
μ
A
I
CEO
I
CBO
I
EBO
–
–
50
–
–
10
Emitter Cutoff Current
–
–
100
Note 1. Pulse test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
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