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參數(shù)資料
| 型號： | NTE325 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN RF Power Transistor 50W @ 30MHz |
| 中文描述： | 硅npn型射頻功率晶體管50瓦@ 30MHz頻段 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 22K |
| 代理商： | NTE325 |
NTE325
Silicon NPN RF Power Transistor
50W @ 30MHz
Description:
The NTE325 is a silicon NPN RF power transistor in a T72H type package designed for power amplifier
applications in industrial, commercial, and amateur radio equipment to 30MHz.
Features:
Specified 12.5V, 30MHz Characteristics:
Output Power = 50W
Minimum Gain = 11dB
Efficiency = 50%
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CBO
Emitter–Base Voltage, V
EBO
Continuous Collector Current, I
C
Total Device Dissipation (T
C
= +25
°
C), P
D
Derate Above 25
°
C
Storage Temperature Range, T
stg
Thermal Resistance, Junction to Case, R
Θ
JC
20V
40V
4V
7.5A
115W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.66W/
°
C
–65
°
to +150
°
C
1.53
°
C/W
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
C
= 100mA, I
B
= 0
I
C
= 20mA, V
BE
= 0
I
C
= 20mA, I
E
= 0
I
E
= 10mA, I
C
= 0
20
–
–
V
40
–
–
V
Collector–Base Breakdown Voltage
40
–
–
V
Emitter–Base Breakdown Voltage
4
–
–
V
ON Characteristics
DC Current Gain
h
FE
I
C
= 1A, V
CE
= 5V
10
–
–
Dynamic Characteristics
Output Capacitance
C
ob
V
CB
= 15V, I
E
= 0, f = 1MHz
–
–
200
pF
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| NTE326 | 制造商:NTE Electronics 功能描述:JFET P-CHANNEL 40V TO-92 CASE GENERAL PURPOSE AF AMP 制造商:NTE Electronics 功能描述:GEN PURP AF AMP 制造商:NTE Electronics 功能描述:Trans JFET P-CH 3-Pin TO-92 |
| NTE327 | 制造商:NTE Electronics 功能描述:TRANSISTOR NPN SILICON 180V IC=25A TO-3 CASE POWER AMP AND SWITCH FOR INDUSTRIAL 制造商:NTE Electronics 功能描述:T-NPN- SI-PWR AMP- SW 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:150V; Transition Frequency Typ ft:40MHz; Power Dissipation Pd:200W; DC Collector Current:25A; DC Current Gain hFE:50; Operating Temperature Min:-65C ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 150V 25A 3-Pin(2+Tab) TO-3 |
| NTE328 | 制造商:NTE Electronics 功能描述:T-NPN- SI-PWR AMP- SW 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, NPN, 120V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:120V; Transition Frequency Typ ft:40MHz; Power Dissipation Pd:200W; DC Collector Current:25A; DC Current Gain hFE:120; No. of Pins:2 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 120V 50A 3-Pin(2+Tab) TO-3 |
| NTE329 | 制造商:NTE Electronics 功能描述:T-NPN- SI-RF PWR AMP- CB 制造商:NTE Electronics 功能描述:TO-39 NPN RF PWR AMP |
| NTE330 | 制造商:NTE Electronics 功能描述:TRANSISTOR PNP GERMANIUM 50V IC=25A TO-36 CASE HIGH POWER SWITCH 制造商:NTE Electronics 功能描述:Trans GP BJT PNP 40V 25A 3-Pin TO-36 |
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