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參數(shù)資料
| 型號(hào)： | NTE3081 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Optoisolator NPN Transistor Output |
| 中文描述： | NPN晶體管輸出光隔離器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 24K |
| 代理商： | NTE3081 |
NTE3081
Optoisolator
NPN Transistor Output
Description:
The NTE3081 consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor
in a low cost plastic package with lead spacing compatible with dual–in–line packages.
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Total Device
Surge Isolation Voltage (Input to Output), V
ISO
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Steady–State Isolation Voltage (Input to Output), V
ISO
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 5sec Max), T
L
Infrared Emitting Diode (Emitter)
Forward Current, I
F
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Pulse Width
≤
1
μ
s, PRR
≤
300pps)
Reverse Voltage, V
R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation, P
E
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Phototransistor (Detector)
Continuous Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Collector Voltage, V
ECO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation, P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6000V
4242V
4500V
3200V
–55
°
to +85
°
C
–55
°
to +85
°
C
+260
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60mA
3A
4V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100mW
1.67mW/
°
C
100mA
30V
6V
150mW
2.5mW/
°
C
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