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參數(shù)資料
| 型號： | NTE3083 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Optoisolator NPN Darlington Transistor Output |
| 中文描述： | 光隔離器NPN達林頓晶體管輸出 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 25K |
| 代理商： | NTE3083 |
NTE3083
Optoisolator
NPN Darlington Transistor Output
Description:
The NTE3083 contains a gallium arsenide infrared emitter optically coupled to a silicon planer photo–
darlington in a 6–Lead DIP type package.
Features:
High Sensitivity: 1mA on the Input will Sink a TTL gate
High Isolation: 3550VDC, 10
12
, 0.5pF
Absolute Maximum Ratings:
Storage Temperature Range, T
stg
Operating Temperature Range, T
opr
Lead Temperature (During Soldering, 10sec), T
L
Total Power Dissipation (T
A
= +25
°
C), P
D
Derate Linearly to 100
°
C
Input to Output Isolation Voltage (1sec), V
ISOL
–65
°
to +150
°
C
–55
°
to +100
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+260
°
C
250mW
3.3mW/
°
C
3550VDC
Input Diode
Forward Current, I
F
Reverse Voltage, V
R
Peak Forward Current (1
μ
s pulse, 300pps), I
F
peak
60mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3V
3A
Output Darlington
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CBO
Emitter–Base Voltage, V
EBO
Collector Current, I
C
30V
30V
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
125mA
Electro–Optical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Isolation Between Emitter and Detector
Capacitance
C
iso
Resistance
R
iso
Voltage Breakdown
V
iso
Test Conditions
Min
Typ
Max
Unit
f = 1MHz
V = 500VDC
t = 1sec
–
0.5
10
12
–
–
–
–
pF
VDC
10
11
3550
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