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參數(shù)資料
| 型號： | NTE3085 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Optoisolator Photon Coupled Bilateral Analog FET |
| 中文描述： | 光隔離器光子耦合雙邊模擬場效應(yīng)管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 24K |
| 代理商： | NTE3085 |
NTE3085
Optoisolator
Photon Coupled Bilateral Analog FET
Description:
The NTE3085 consists of a gallium arsenide infrared emitting diode coupled to a symmetrical silicon
photo detector. The detector is electrically isolated from the input and performs like an ideal isolated
FET designed for distortion–free control of low AC and DC analog signals.
Features:
As A Remote Variable Resistor
≤
100
to
≥
300M
≥
99.9% Linearity
≤
15pF Shunt Capacitance
≥
100G
I/O Isolation Resistance
As An Analog Signal Switch
Extremely Low Offset Voltage
60V
P–P
Signal Capability
No Charge Injection or Latchup
t
on
, t
off
≤
15
μ
s
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Infrared Emitting Diode
Power Dissipation (T
A
= +25
°
C), P
D
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Current, I
F
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Pulse Width 100
μ
s, 100pps)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Pulse Width 1
μ
s, 300pps)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Voltage, V
R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Photo Detector
Power Dissipation (T
A
= +25
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Breakdow Voltage, V
(BR)46
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continouos Detector Current, I
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device
Surge Isolation Voltage (Input to Output), V
ISO
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Steady–State Isolation Voltage (Input to Output), V
ISO
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 10sec Max), T
L
150mW
2.0mW/
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60mA
500mA
3A
6V
300mW
4.0mW/
°
C
±
30V
±
100mA
2500V
1770V
1500V
1060V
–55
°
to +100
°
C
–55
°
to +150
°
C
+260
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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