參數(shù)資料
型號(hào)： NTE3086
廠商： NTE Electronics, Inc.
英文描述： Optoisolator Dual NPN Transistor Output
中文描述： 光隔離器雙NPN晶體管輸出
文件頁(yè)數(shù)： 1/3頁(yè)
文件大小： 23K
代理商： NTE3086
NTE3086
Optoisolator
Dual NPN Transistor Output
Description:
The NTE3086 is a standard dual optocoupler consisting of a GaAs Infrared LED and a silicon photo-
transistor per channel. This device is constructed with a high voltage insulation, double molded pack-
aging process which offers 7.5KV withstand test capability.
Features:
Two isolated Channels per Package
7500V Withstand Test Voltage
CTR Minimum: 20%
Absolute Maximum Ratings:
Gallium Arsenide LED (Each Channel)
Power Dissipation (T
A
= +25
°
C), P
D
Derate Above 25
°
C
Forward Current, I
F
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Pulse Width 1
μ
s, 300pps)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Phototransistor (Each Channel)
Power Dissipation (T
A
= +25
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Breakdow Voltage, V
(BR)CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Breakdow Voltage, V
(BR)CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Collector Breakdow Voltage, V
(BR)ECO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device
Power Dissipation (T
A
= +25
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 10sec Max), T
L
100mW
1.3mW/
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60mA
3A
150mW
2.0mW/
°
C
30V
80V
6V
400mW
5.33mW/
°
C
–55
°
to +100
°
C
–55
°
to +150
°
C
+250
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Gallium Arsenide LED
Forward Voltage
V
F
V
R
I
R
I
F
= 20mA
I
R
= 10
μ
A
V
R
= 3V
V = 0, f = 1MHz
–
1.1
1.5
V
Reverse Voltage
3
25
–
V
μ
A
pF
Reverse Current
–
–
10
Junction Capacitance
–
80
–
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