參數(shù)資料
型號： NTE2986
廠商： NTE Electronics, Inc.
英文描述： Dual Channel, 1/1, 150Mbps Digital Isolator 8-SOIC -40 to 125
中文描述： 邏輯電平MOSFET N溝道，增強(qiáng)模式高速開關(guān)
文件頁數(shù)： 2/3頁
文件大?。?/td> 27K
代理商： NTE2986
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Drain
–
Source Breakdown Voltage
BV
DSS
V
(BR)DSS
/
T
J
R
DS(on)
V
GS
= 0v, I
D
= 250
μ
A
Reference to +25
°
C, I
D
= 1mA
60
–
–
–
–
V
Breakdown Voltage Temperature
Coefficient
0.07
V/
°
C
Static Drain
–
Source ON Resistance
V
GS
= 5V, I
D
= 31A, Note 4
V
GS
= 4V, I
D
= 25A, Note 4
V
DS
= V
GS
, I
D
= 250
μ
A
V
DS
≥
25V, I
D
= 31A, Note 4
V
DS
= 60V, V
GS
= 0
V
DS
= 48V, V
GS
= 0V, , T
C
= +150
°
C
V
GS
= 10V
V
GS
=
–
10V
V
GS
= 5V, I
D
= 51A, V
DS
= 48V
–
–
0.028
V
–
–
0.039
Gate Threshold Voltage
V
GS(th)
g
fs
I
DSS
1.0
–
2.0
Forward Transconductance
23
–
–
mhos
μ
A
μ
A
nA
Drain
–
to
–
Source Leakage Current
–
–
25
–
–
250
Gate
–
Source Leakage Forward
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
–
–
100
Gate
–
Source Leakage Reverse
–
–
–
100
nA
Total Gate Charge
–
–
66
nC
Gate
–
Source Charge
–
–
12
nC
Gate
–
Drain (
“
Miller
”
) Charge
–
–
43
nC
Turn
–
On Delay Time
V
DD
= 30V
,
I
D
= 51A, R
G
= 4.6
,
R
D
= 0.56
–
17
–
ns
Rise Time
–
230
–
ns
Turn
–
Off Delay Time
–
42
–
ns
Fall Time
–
110
–
ns
Internal Drain Inductance
Between lead, 6mm (0.25
”
) from
package and center of die contact
–
4.5
–
nH
Internal Source Inductance
–
7.5
–
nH
Input Capacitance
V
GS
= 0V, V
DS
= 25V, f = 1MHz
–
3300
–
pF
Output Capacitance
–
1200
–
pF
Reverse Transfer Capacitance
–
200
–
pF
Source
–
Drain Diode Ratings and Characteristics
Continuous Source Current
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
(Body Diode)
–
–
50
A
Pulse Source Current
(Body Diode) Note 1
T
J
= +25
°
C, I
S
= 51A, V
GS
= 0V, Note 4
T
J
= +25
°
C, I
F
= 51A, di/dt = 100A/
μ
s,
Note 4
–
–
200
A
Diode Forward Voltage
–
–
2.5
V
Reverse Recovery Time
–
130
180
ns
μ
C
Reverse Recovery Charge
–
0.84
1.3
Forward Turn
–
On Time
Intrinsic turn
–
on time is neglegible
(turn
–
on is dominated by L
S
+ L
D
)
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
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