參數(shù)資料
型號： NTE2984
廠商： NTE Electronics, Inc.
英文描述： Dual Channel, 1/1, 150Mbps Digital Isolator 8-SOIC -40 to 125
中文描述： 邏輯電平MOSFET N溝道，增強模式高速開關(guān)
文件頁數(shù)： 1/3頁
文件大?。?/td> 24K
代理商： NTE2984
NTE2984
Logic Level MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Features:
Dynamic dv/dt Rating
Logic Level Gate Drive
R
DS
(on) Specified at V
GS
= 4V & 5V
+175
°
C Operating Temperature
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Absolute Maximum Ratings:
Drain Current, I
D
Continuous (V
GS
= 5V)
T
C
= +25
°
C
T
C
= +100
°
C
Pulsed (Note 1)
Total Power Dissipation (T
C
= +25
°
C), P
D
Derate Above 25
°
C
Gate–Source Voltage, V
GS
Single Pulsed Avalanche Energy (Note 2), E
AS
Peak Diode Recovery dv/dt (Note 3), dv/dt
Operating Junction Temperature Range, T
J
Storage Temperature Range, T
stg
Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), T
L
Mounting Torque, 6–32 or M3 Screw
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance:
Maximum Junction–to–Case, R
thJC
Typical Case–to–Sink (Mounting surface flat, smooth, and greased), R
thCS
Maximum Junction–to–Ambient (Free Air Operation), R
thJA
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2. L = 444
μ
H, V
DD
= 25V, R
G
= 25
, Starting T
J
= +175
°
C.
Note 3. I
SD
≤
17A, di/dt
≤
140A/
μ
s, V
DD
≤
V
(BR)DSS
, T
J
≤
+175
°
C.
17A
12A
68A
60W
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.40W/
°
C
±
10V
110mJ
4.5V/ns
–55
°
to +175
°
C
–55
°
to +175
°
C
. . . . . . . . . .
10 lbf
in (1.1 N
m)
+300
°
C
2.5K/W
0.5K/W
62K/W
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相關(guān)PDF資料
PDF描述
NTE2985 Dual Channel, 1/1, 150Mbps Digital Isolator 8-SOIC -40 to 125
NTE2986 Dual Channel, 1/1, 150Mbps Digital Isolator 8-SOIC -40 to 125
NTE2987 Single 150Mbps Digital Isolator with Enable 8-SOIC -40 to 125
NTE2988 Single 150Mbps Digital Isolator with Enable 8-SOIC -40 to 125
NTE2989 Single 150Mbps Digital Isolator with Enable 8-SOIC -40 to 125
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTE2985 制造商:NTE Electronics 功能描述:POWER MOSFET N-CHANNEL 60V ID=30A TO-220 CASE LOGIC LEVEL HIGH SPEED SWITCH 制造商:NTE Electronics 功能描述:MOSFET-PWR N-CHAN-60V-30A 制造商:NTE Electronics 功能描述:Trans MOSFET N-CH 60V 30A 3-Pin(3+Tab) TO-220
NTE2986 制造商:NTE Electronics 功能描述:POWER MOSFET N-CHANNEL 60V ID=50A TO-220 CASE LOGIC LEVEL HIGH SPEED SWITCH 制造商:NTE Electronics 功能描述:MOSFET-PWR N CHAN-60V-50A 制造商:NTE Electronics 功能描述:Trans MOSFET N-CH 60V 50A 3-Pin(3+Tab) TO-220
NTE2987 制造商:NTE Electronics 功能描述:POWER MOSFET N-CHANNEL 100V ID=20A TO220 CASE LOGIC LEVEL HIGH SPEED SWITCH 制造商:NTE Electronics 功能描述:Bulk 制造商:NTE Electronics 功能描述:IC N-CH HIGH SPEED SWITCH 20A TO220-3 制造商:NTE Electronics 功能描述:IC, N-CH HIGH SPEED SWITCH, 20A, TO220-3 制造商:NTE Electronics 功能描述:MOSFET-PWR N CHAN-100V-20 制造商:NTE Electronics 功能描述:TO-220 N-CH 100V 20A 制造商:NTE Electronics 功能描述:IC, N-CH HIGH SPEED SWITCH, 20A, TO220-3; No. of Pins:3; Filter Terminals:Through Hole; Leakage Current:10A; Mounting Type:Through Hole; No. of Channels:1; Output Current Max:20A; Package / Case:3-TO-220; Power Dissipation Pd:105W ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans MOSFET N-CH 100V 20A 3-Pin(3+Tab) TO-220
NTE2988 制造商:NTE Electronics 功能描述:MOSFET N-CHANNEL 60V ID=0.2A TO-52 CASE HIGH SPEED SWITCH
NTE2989 制造商:NTE Electronics 功能描述:N CH MOSFET 600V 10A TO-220VAR 制造商:NTE Electronics 功能描述:N CH MOSFET, 600V, 10A, TO-220VAR 制造商:NTE Electronics 功能描述:MOSFET-PWR N CHANNEL-600V 制造商:NTE Electronics 功能描述:N CH MOSFET, 600V, 10A, TO-220VAR; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; No. of Pins:3 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220
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