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參數(shù)資料
| 型號： | NTE255 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Dual JFET-input Operational Amplifier 8-PDIP 0 to 70 |
| 中文描述： | 硅NPN晶體管水平驅(qū)動器，放大器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 20K |
| 代理商： | NTE255 |
NTE255
Silicon NPN Transistor
Horizontal Driver, Amp
Absolute Maximum Ratings:
Collector–Base Voltage, V
CBO
Collector–Emitter Voltage, V
CEO
Emitter–Base Voltage, V
EBO
Collector Current, I
C
Power Dissipation (T
A
= +25
°
C), P
D
max
Power Dissipation (T
COLLECTOR LEAD
= +25
°
C), P
D
max
Maximum Operating Junction Temperature, T
J
max
Thermal Resistance, Junction–to–Case (T
COLLECTOR LEAD
= +25
°
C), R
thJC
Thermal Resistance, Junction–to–Ambient (T
A
= +25
°
C), R
thJA
325V
300V
6V
500mA
850mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2W
+150
°
C
62.5
°
C/W
147
°
C/W
. . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Collector Cutoff Current
DC Current Gain
Symbol
I
CBO
h
FE
Test Conditions
V
CB
= 300V
I
C
= 50mA, V
CE
= 10V, Note 1
I
C
= 100mA, V
CE
= 10V, Note 1
I
C
= 250mA, V
CE
= 10V, Note 1
I
C
= 500mA, V
CE
= 10V, Note 1
V
CE(sat)
I
C
= 100mA, I
B
= 10mA, Note 1
V
BE(sat)
I
C
= 500mA, I
B
= 100mA, Note 1
f
T
I
C
= 50mA
C
ob
V
CB
= 10V, f = 1MHz
C
ib
V
BE
= 0.5V, f = 1MHz
Min
–
25
30
15
10
–
–
30
–
–
Typ
–
–
–
–
–
0.2
0.9
–
–
–
Max
1.0
–
–
–
50
0.5
1.2
300
15
125
Unit
μ
A
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Transition Frequency
Output Capacitance
Input Capacitance
V
V
MHz
pF
pF
Note 1. Pulse Test: Pulse Width = 300
μ
s.
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